High permittivity gate dielectric materials
"The book comprehensively covers all the current and the emerging areas of the physics and the technology of high permittivity gate dielectric materials, including, topics such as MOSFET basics and characteristics, hafnium-based gate dielectric materials, Hf-based gate dielectric processing, me...
Gespeichert in:
| Weitere Verfasser: | |
|---|---|
| Format: | Livre numérique |
| Sprache: | Anglais |
| Veröffentlicht: |
Berlin, Heidelberg :
Springer Berlin Heidelberg
[20..].
Cham : Springer Nature |
| Ausgabe: | 1st ed. 2013. |
| Schriftenreihe: | Springer Series in Advanced Microelectronics
43 |
| Online Zugang: | Accès sur la plateforme de l'éditeur Accès sur la plateforme Istex Accès Université d'Orléans Accès INSA CVL |
| Anmerkung: |
Archives Springer e-books (Licence nationale) Archives Springer e-books (Licence nationale) |
| Autres localisations: | Voir dans le Sudoc |
| Edition sous un autre format: | • High Permittivity Gate Dielectric Materials, Texte imprimé, 9783642365348 • High Permittivity Gate Dielectric Materials, Texte imprimé, 9783642365362 • High Permittivity Gate Dielectric Materials, Texte imprimé, 9783662501382 |
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| 041 | 0 | |a eng | |
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| 245 | 0 | 0 | |a High permittivity gate dielectric materials |c edited by Samares Kar. |
| 250 | |a 1st ed. 2013. | ||
| 260 | |a Berlin, Heidelberg : |b Springer Berlin Heidelberg. | ||
| 260 | |a Cham : |b Springer Nature, |c [20..]. | ||
| 490 | 0 | |a Springer Series in Advanced Microelectronics |v 43 |x 2197-6643 | |
| 500 | |a Archives Springer e-books (Licence nationale) | ||
| 500 | |a Archives Springer e-books (Licence nationale) | ||
| 505 | 1 | |a Historical Perspectives High Mobility Channels Non-Volatile Memory Hafnium-Based Gate Dielectric Materials Lanthanum-Based High-K Gate Dielectric Materials Crystalline High-K Gate Dielectric Materials High-K Gate Dielectric Processing.- Metal Gate Electrodes Flat-Band/Threshold Voltage Control Interfaces and Defects Electrical Characterization and Parameter Extraction Non-Contact Metrology of High-K Gate Dielectrics Channel Mobility High-K Gate Dielectric Reliability Issues Bias Temperature Instability Integration Issues. | |
| 506 | |a Accès en ligne pour les établissements français bénéficiaires des licences nationales | ||
| 506 | |a Accès soumis à abonnement pour tout autre établissement | ||
| 506 | |a Conditions particulières de réutilisation pour les bénéficiaires des licences nationales. https://www.licencesnationales.fr/springer-nature-ebooks-contrat-licence-ln-2017 | ||
| 520 | |a "The book comprehensively covers all the current and the emerging areas of the physics and the technology of high permittivity gate dielectric materials, including, topics such as MOSFET basics and characteristics, hafnium-based gate dielectric materials, Hf-based gate dielectric processing, metal gate electrodes, flat-band and threshold voltage tuning, channel mobility, high-k gate stack degradation and reliability, lanthanide-based high-k gate stack materials, ternary hafnia and lanthania based high-k gate stack films, crystalline high-k oxides, high mobility substrates, and parameter extraction. Each chapter begins with the basics necessary for understanding the topic, followed by a comprehensive review of the literature, and ultimately graduating to the current status of the technology and our scientific understanding and the future prospects | ||
| 700 | 1 | |a Kar, Samares, |d 1942- |4 pbd | |
| 776 | 0 | |t High Permittivity Gate Dielectric Materials |b Texte imprimé |z 9783642365348 | |
| 776 | 0 | |t High Permittivity Gate Dielectric Materials |b Texte imprimé |z 9783642365362 | |
| 776 | 0 | |t High Permittivity Gate Dielectric Materials |b Texte imprimé |z 9783662501382 | |
| 856 | 4 | |q PDF |u https://doi.org/10.1007/978-3-642-36535-5 |z Accès sur la plateforme de l'éditeur | |
| 856 | 4 | |u https://revue-sommaire.istex.fr/ark:/67375/8Q1-D1J8JZJH-6 |z Accès sur la plateforme Istex | |
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