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Nanometer Variation-Tolerant SRAM : Circuits and Statistical Design for Yield

Nanometer Variation-Tolerant SRAM : Circuits and Statistical Design for Yield

Variability is one of the most challenging obstacles for IC design in the nanometer regime. In nanometer technologies, SRAM show an increased sensitivity to process variations due to low-voltage operation requirements, which are aggravated by the strong demand for lower power consumption and cost,...

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Autori principali:	Abu-Rahma, Mohamed H., Anis, Mohab (Autore)
Natura:	Livre numérique
Lingua:	Anglais
Pubblicazione:	New York, NY : Springer New York 2013. Cham : Springer Nature
Accesso online:	Accès sur la plateforme de l'éditeur Accès sur la plateforme Istex Accès Université d'Orléans Accès INSA CVL
Nota:	Archives Springer e-books (Licence nationale) Archives Springer e-books (Licence nationale)
Autres localisations:	Voir dans le Sudoc
Edition sous un autre format:	• Nanometer Variation-Tolerant SRAM, Texte imprimé, 9781461417484 • Nanometer Variation-Tolerant SRAM, Texte imprimé, 9781461417507 • Nanometer Variation-Tolerant SRAM, Texte imprimé, 9781493902200

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