High dielectric constant materials : VLSI MOSFET applications
Issues relating to the high-K gate dielectric are among the greatest challenges for the evolving International Technology Roadmap for Semiconductors (ITRS). More than just an historical overview, this book will assess previous and present approaches related to scaling the gate dielectric and their i...
Guardat en:
| Altres autors: | , |
|---|---|
| Format: | Livre numérique |
| Idioma: | Anglais |
| Publicat: |
Berlin, Heidelberg :
Springer Berlin Heidelberg
[20..].
Cham : Springer Nature |
| Edició: | 1st ed. 2005. |
| Col·lecció: | Springer Series in Advanced Microelectronics
16 |
| Accés en línia: | Accès sur la plateforme de l'éditeur Accès sur la plateforme Istex Accès Université d'Orléans Accès INSA CVL |
| Nota: |
Archives Springer e-books (Licence nationale) Archives Springer e-books (Licence nationale) |
| Autres localisations: | Voir dans le Sudoc |
| Edition sous un autre format: | • High dielectric constant materials, VLSI MOSFET applications, H.R. Huff, D.C. Gilmer (eds.), Berlin, Springer, 2005, XXIV-710 p., Springer series in advanced microelectronics, 3-540-21081-4 • High Dielectric Constant Materials, Texte imprimé, 9783540800965 • High Dielectric Constant Materials, Texte imprimé, 9783642059216 |
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| 245 | 0 | 0 | |a High dielectric constant materials : |b VLSI MOSFET applications |c edited by H.R. Huff, D.C. Gilmer. |
| 250 | |a 1st ed. 2005. | ||
| 260 | |a Berlin, Heidelberg : |b Springer Berlin Heidelberg. | ||
| 260 | |a Cham : |b Springer Nature, |c [20..]. | ||
| 490 | 0 | |a Springer Series in Advanced Microelectronics |v 16 |x 2197-6643 | |
| 500 | |a Archives Springer e-books (Licence nationale) | ||
| 500 | |a Archives Springer e-books (Licence nationale) | ||
| 505 | 1 | |a Classical Regime for SiO Brief Notes on the History of Gate Dielectrics in MOS Devices SiO2 Based MOSFETS: Film Growth and Si SiO2 Interface Properties Oxide Reliability Issues The Economic Implications of Moore's Law Transition to Silicon Oxynitrides Gate Dielectric Scaling to 2.0 1.0 nm: SiO2 and Silicon Oxynitride Optimal Scaling Methodologies and Transistor Performance Silicon Oxynitride Gate Dielectric for Reducing Gate Leakage and Boron Penetration Prior to High-k Gate Dielectric Implementation Transition to High-k Gate Dielectrics Alternative Dielectrics for Silicon-Based Transistors: Selection Via Multiple Criteria Materials Issues for High-k Gate Dielectric Selection and Integration Designing Interface Composition and Structure in High Dielectric Constant Gate Stacks Electronic Structure of Alternative High-k Dielectrics Physicochemical Properties of Selected 4d, 5d, and Rare Earth Metals in Silicon High-k Gate Dielectric Deposition Technologies Issues in Metal Gate Electrode Selection for Bulk CMOS Devices CMOS IC Fabrication Issues for High-k Gate Dielectric and Alternate Electrode Materials Characterization and Metrology of Medium Dielectric Constant Gate Dielectric Films Electrical Measurement Issues for Alternative Gate Stack Systems High-k Gate Dielectric Materials Integrated Circuit Device Design Issues Future Directions for Ultimate Scaling Technology Generations High-k Crystalline Gate Dielectrics: A Research Perspective High-k Crystalline Gate Dielectrics: An IC Manufacturer's Perspective Advanced MOS-Devices | |
| 506 | |a Accès en ligne pour les établissements français bénéficiaires des licences nationales | ||
| 506 | |a Accès soumis à abonnement pour tout autre établissement | ||
| 506 | |a Conditions particulières de réutilisation pour les bénéficiaires des licences nationales. https://www.licencesnationales.fr/springer-nature-ebooks-contrat-licence-ln-2017 | ||
| 520 | |a Issues relating to the high-K gate dielectric are among the greatest challenges for the evolving International Technology Roadmap for Semiconductors (ITRS). More than just an historical overview, this book will assess previous and present approaches related to scaling the gate dielectric and their impact, along with the creative directions and forthcoming challenges that will define the future of gate dielectric scaling technology. Topics include: an extensive review of Moore's Law, the classical regime for SiO2 gate dielectrics; the transition to silicon oxynitride gate dielectrics; the transition to high-K gate dielectrics (including the drive towards equivalent oxide thickness in the single-digit nanometer regime); and future directions and issues for ultimate technology generation scaling. The vision, wisdom, and experience of the team of authors will make this book a timely, relevant, and interesting, resource focusing on fundamentals of the 45 nm Technology Generation and beyond | ||
| 700 | 1 | |a Gilmer, David C. |4 pbd | |
| 700 | 1 | |a Huff, Howard R. |4 pbd | |
| 776 | 0 | |0 083493298 |t High dielectric constant materials |o VLSI MOSFET applications |f H.R. Huff, D.C. Gilmer (eds.) |c Berlin |n Springer |d 2005 |p XXIV-710 p. |s Springer series in advanced microelectronics |z 3-540-21081-4 | |
| 776 | 0 | |t High Dielectric Constant Materials |b Texte imprimé |z 9783540800965 | |
| 776 | 0 | |t High Dielectric Constant Materials |b Texte imprimé |z 9783642059216 | |
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