High dielectric constant materials : VLSI MOSFET applications
Issues relating to the high-K gate dielectric are among the greatest challenges for the evolving International Technology Roadmap for Semiconductors (ITRS). More than just an historical overview, this book will assess previous and present approaches related to scaling the gate dielectric and their i...
Bewaard in:
| Andere auteurs: | , |
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| Formaat: | Livre numérique |
| Taal: | Anglais |
| Gepubliceerd in: |
Berlin, Heidelberg :
Springer Berlin Heidelberg
[20..].
Cham : Springer Nature |
| Editie: | 1st ed. 2005. |
| Reeks: | Springer Series in Advanced Microelectronics
16 |
| Online toegang: | Accès sur la plateforme de l'éditeur Accès sur la plateforme Istex Accès Université d'Orléans Accès INSA CVL |
| Opmerking: |
Archives Springer e-books (Licence nationale) Archives Springer e-books (Licence nationale) |
| Autres localisations: | Voir dans le Sudoc |
| Edition sous un autre format: | • High dielectric constant materials, VLSI MOSFET applications, H.R. Huff, D.C. Gilmer (eds.), Berlin, Springer, 2005, XXIV-710 p., Springer series in advanced microelectronics, 3-540-21081-4 • High Dielectric Constant Materials, Texte imprimé, 9783540800965 • High Dielectric Constant Materials, Texte imprimé, 9783642059216 |
| Samenvatting: | Issues relating to the high-K gate dielectric are among the greatest challenges for the evolving International Technology Roadmap for Semiconductors (ITRS). More than just an historical overview, this book will assess previous and present approaches related to scaling the gate dielectric and their impact, along with the creative directions and forthcoming challenges that will define the future of gate dielectric scaling technology. Topics include: an extensive review of Moore's Law, the classical regime for SiO2 gate dielectrics; the transition to silicon oxynitride gate dielectrics; the transition to high-K gate dielectrics (including the drive towards equivalent oxide thickness in the single-digit nanometer regime); and future directions and issues for ultimate technology generation scaling. The vision, wisdom, and experience of the team of authors will make this book a timely, relevant, and interesting, resource focusing on fundamentals of the 45 nm Technology Generation and beyond |
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| Beschrijving item: | Archives Springer e-books (Licence nationale) Archives Springer e-books (Licence nationale) |
| ISBN: | 9783540264620 |
| ISSN: | 2197-6643 |
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