GaN-Based Laser Diodes : Towards Longer Wavelengths and Short Pulses

The emergence of highly efficient short-wavelength laser diodes based on the III-V compound semiconductor GaN has not only enabled high-density optical data storage, but is also expected to revolutionize display applications. Moreover, a variety of scientific applications in biophotonics, materials...

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Détails bibliographiques
Auteur principal: Scheibenzuber, Wolfgang G., 1984-
Format: Livre numérique
Langue:Anglais
Publié: Berlin, Heidelberg : Springer Berlin Heidelberg 2012.
Cham : Springer Nature
Collection:Springer Theses, Recognizing Outstanding Ph.D. Research
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Edition sous un autre format:• GaN-Based Laser Diodes, Texte imprimé, 9783642245374
• GaN-Based Laser Diodes, Texte imprimé, 9783642435485
• GaN-Based Laser Diodes, Texte imprimé, 9783642245398
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Résumé:The emergence of highly efficient short-wavelength laser diodes based on the III-V compound semiconductor GaN has not only enabled high-density optical data storage, but is also expected to revolutionize display applications. Moreover, a variety of scientific applications in biophotonics, materials research and quantum optics can benefit from these versatile and cost-efficient laser light sources in the near-UV to green spectral range. This thesis describes the device physics of GaN-based laser diodes, together with recent efforts to achieve longer emission wavelengths and short-pulse emission. Experimental and theoretical approaches are employed to address the individual device properties and optimize the laser diodes toward the requirements of specific applications.
Description:Archives Springer e-books (Licence nationale)
Archives Springer e-books (Licence nationale)
ISBN:9783642245381
ISSN:2190-5061
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