Fowler-Nordheim field emission : :: SCD d'Orléans

Fowler-Nordheim field emission : effects in semiconductor nanostructures

Fowler-Nordheim field emission : effects in semiconductor nanostructures

This monograph solely presents the Fowler-Nordheim field emission (FNFE) from semiconductors and their nanostructures. The materials considered are quantum confined non-linear optical, III-V, II-VI, Ge, Te, carbon nanotubes, PtSb2, stressed materials, Bismuth, GaP, Gallium Antimonide, II-V, Bi2Te3,...

Cur síos iomlán

Sábháilte in:

Sonraí bibleagrafaíochta
Príomhchruthaitheoirí:	Bhattacharya, Sitangshu, 19..-, Ghatak, Kamakhya Prasad (Údar)
Formáid:	Livre numérique
Teanga:	Anglais
Foilsithe / Cruthaithe:	Berlin, Heidelberg : Springer Berlin Heidelberg 2012. Cham : Springer Nature
Eagrán:	2012.
Sraith:	Springer Series in Solid-State Sciences 170
Rochtain ar líne:	Accès sur la plateforme de l'éditeur Accès sur la plateforme Istex Accès Université d'Orléans Accès INSA CVL
Nóta:	Archives Springer e-books (Licence nationale) Archives Springer e-books (Licence nationale)
Autres localisations:	Voir dans le Sudoc
Edition sous un autre format:	• Fowler-nordheim Field Emission, Effects in Semiconductor Nanostructures, Sitangshu Bhattacharya, Kamakhya Prasad Ghatak, Heidelberg, Springer, 2011, 1 vol. (XXII-338 p.), Springer series in solid-state sciences, 978-3-642-20492-0

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