Low Power and Reliable SRAM Memory Cell and Array Design
Success in the development of recent advanced semiconductor device technologies is due to the success of SRAM memory cells. This book addresses various issues for designing SRAM memory cells for advanced CMOS technology. To study LSI design, SRAM cell design is the best materials subject because iss...
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| Altri autori: | Ishibashi, Koichiro (Direttore editoriale), Osada, Kenichi (Direttore editoriale) |
|---|---|
| Natura: | Livre numérique |
| Lingua: | Anglais |
| Pubblicazione: |
Berlin, Heidelberg :
Springer Berlin Heidelberg
2011.
Cham : Springer Nature |
| Serie: | Springer Series in Advanced Microelectronics
31 |
| Accesso online: | Accès sur la plateforme de l'éditeur Accès sur la plateforme Istex Accès Université d'Orléans Accès INSA CVL |
| Nota: |
Archives Springer e-books (Licence nationale) Archives Springer e-books (Licence nationale) |
| Autres localisations: | Voir dans le Sudoc |
| Edition sous un autre format: | • Low Power and Reliable SRAM Memory Cell and Array Design, Texte imprimé, 9783642195679 • Low Power and Reliable SRAM Memory Cell and Array Design, Texte imprimé, 9783642195693 • Low Power and Reliable SRAM Memory Cell and Array Design, Texte imprimé, 9783642270185 |
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