Low Power and Reliable SRAM Memory Cell and Array Design
Success in the development of recent advanced semiconductor device technologies is due to the success of SRAM memory cells. This book addresses various issues for designing SRAM memory cells for advanced CMOS technology. To study LSI design, SRAM cell design is the best materials subject because iss...
Tallennettuna:
| Muut tekijät: | , |
|---|---|
| Aineistotyyppi: | Livre numérique |
| Kieli: | Anglais |
| Julkaistu: |
Berlin, Heidelberg :
Springer Berlin Heidelberg
2011.
Cham : Springer Nature |
| Sarja: | Springer Series in Advanced Microelectronics
31 |
| Linkit: | Accès sur la plateforme de l'éditeur Accès sur la plateforme Istex Accès Université d'Orléans Accès INSA CVL |
| Huomautus: |
Archives Springer e-books (Licence nationale) Archives Springer e-books (Licence nationale) |
| Autres localisations: | Voir dans le Sudoc |
| Edition sous un autre format: | • Low Power and Reliable SRAM Memory Cell and Array Design, Texte imprimé, 9783642195679 • Low Power and Reliable SRAM Memory Cell and Array Design, Texte imprimé, 9783642195693 • Low Power and Reliable SRAM Memory Cell and Array Design, Texte imprimé, 9783642270185 |
| LEADER | 02738nam a22003497a 4500 | ||
|---|---|---|---|
| 001 | 973641 | ||
| 008 | 111115s2011 xx ||| |||| 00| 0 eng d | ||
| 009 | PPN156320223 | ||
| 020 | |a 9783642195686 | ||
| 041 | 0 | |a eng | |
| 082 | |a 621.381 | ||
| 245 | 0 | 0 | |a Low Power and Reliable SRAM Memory Cell and Array Design |c edited by Koichiro Ishibashi, Kenichi Osada. |
| 260 | |a Berlin, Heidelberg : |b Springer Berlin Heidelberg. | ||
| 260 | |a Cham : |b Springer Nature, |c 2011. | ||
| 490 | 0 | |a Springer Series in Advanced Microelectronics |v 31 |x 2197-6643 | |
| 500 | |a Archives Springer e-books (Licence nationale) | ||
| 500 | |a Archives Springer e-books (Licence nationale) | ||
| 505 | 0 | |a Preface -- Introduction -- Fundamentals of SRAM Memory Cell -- Electrical Stability -- Sensitivity Analysis -- Memory Cell Design Technique for Low Power SOC -- Array Design Techniques -- Dummy Cell Design -- Reliable Memory Cell Design -- Future Technologies. | |
| 506 | |a Accès en ligne pour les établissements français bénéficiaires des licences nationales | ||
| 506 | |a Accès soumis à abonnement pour tout autre établissement | ||
| 506 | |a Conditions particulières de réutilisation pour les bénéficiaires des licences nationales. chttps://www.licencesnationales.fr/springer-nature-ebooks-contrat-licence-ln-2017 | ||
| 520 | |a Success in the development of recent advanced semiconductor device technologies is due to the success of SRAM memory cells. This book addresses various issues for designing SRAM memory cells for advanced CMOS technology. To study LSI design, SRAM cell design is the best materials subject because issues about variability, leakage and reliability have to be taken into account for the design. | ||
| 700 | 1 | |a Ishibashi, Koichiro. |4 pbd | |
| 700 | 1 | |a Osada, Kenichi. |4 pbd | |
| 776 | 0 | |t Low Power and Reliable SRAM Memory Cell and Array Design |b Texte imprimé |z 9783642195679 | |
| 776 | 0 | |t Low Power and Reliable SRAM Memory Cell and Array Design |b Texte imprimé |z 9783642195693 | |
| 776 | 0 | |t Low Power and Reliable SRAM Memory Cell and Array Design |b Texte imprimé |z 9783642270185 | |
| 856 | 4 | |q PDF |u https://doi.org/10.1007/978-3-642-19568-6 |z Accès sur la plateforme de l'éditeur | |
| 856 | 4 | |u https://revue-sommaire.istex.fr/ark:/67375/8Q1-926BKDRW-5 |z Accès sur la plateforme Istex | |
| 856 | 4 | |5 452349901:750610204 |u https://ezproxy.univ-orleans.fr/login?url=https://doi.org/10.1007/978-3-642-19568-6 |z Accès Université d'Orléans | |
| 856 | 4 | |5 180339901:753969564 |u https://ezproxy.insa-cvl.fr/login?qurl=https://doi.org/10.1007/978-3-642-19568-6 |z Accès INSA CVL | |
| 997 | |0 973641 |1 Livre numérique |a Ressource numérique |b INSA |b ENSA |c 0/Bibliothèque numérique/ |c 1/Bibliothèque numérique/Autre ressource numérique/ | ||