Effective electron mass in low-dimensional semiconductors
This book deals with the Effective Electron Mass (EEM) in low dimensional semiconductors. The materials considered are quantum confined non-linear optical, III-V, II-VI, GaP, Ge, PtSb2, zero-gap, stressed, Bismuth, carbon nanotubes, GaSb, IV-VI, Te, II-V, Bi2Te3, Sb, III-V, II-VI, IV-VI semiconducto...
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| Glavni autori: | , |
|---|---|
| Format: | Livre numérique |
| Jezik: | Anglais |
| Izdano: |
Berlin, Heidelberg :
Springer Berlin Heidelberg
[20..].
Cham : Springer Nature |
| Izdanje: | 1st ed. 2013. |
| Serija: | Springer Series in Materials Science
167 |
| Online pristup: | Accès sur la plateforme de l'éditeur Accès sur la plateforme Istex Accès Université d'Orléans Accès INSA CVL |
| Bilješka: |
Archives Springer e-books (Licence nationale) Archives Springer e-books (Licence nationale) |
| Autres localisations: | Voir dans le Sudoc |
| Edition sous un autre format: | • Effective electron mass in low-dimensional semiconductors, Sitangshu Bhattacharya, Kamakhya Prasad Ghatak, Heidelberg, Springer Verlag, 2013, 1 vol. (XXIII-535 p.), Springer series in materials science, 978-3-642-31247-2 |
Sadržaj:
- Part I: Influence of Light Waves on the Effective Electron Mass (EEM) in Optoelectronic Semiconductors Part II: Influence of Quantum Confinement on the EEM in Non-Parabolic Semiconductors Part III: The EEM in Quantum Confined Superlattices of Non- Parabolic Semiconductors Part IV: Influence of Intense Electric Field on the EEM in Optoelectronic Semiconductors