Silicon Devices and Process Integration : Deep Submicron and Nano-Scale Technologies

Silicon Devices and Process Integration is compiled from industrial and academic lecture notes and reflects years of experience in the development of silicon devices. It is prepared specifically for engineers and scientists in semiconductor research, development and manufacturing. It is also suitabl...

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Glavni avtor: El-Kareh, Badih, 19..-
Format: Livre numérique
Jezik:Anglais
Izdano: New York, NY : Springer US 2009.
Cham : Springer Nature
Online dostop:Accès sur la plateforme de l'éditeur
Accès sur la plateforme Istex
Accès Université d'Orléans
Accès INSA CVL
Sporočilo: Archives Springer e-books (Licence nationale)
Archives Springer e-books (Licence nationale)
Autres localisations: Voir dans le Sudoc
Edition sous un autre format:• Silicon Devices and Process Integration, Texte imprimé, 9780387367989
• Phonon scattering in condensed matter VII, proceedings of the seventh International Conference, Cornell University, Ithaca, New York, August 3-7, 1992, ed. M. Meissner, R.O. Pohl, eds, Berlin, Springer, 1993, 1 vol. (XXV-534 p.), Springer series in solid-state sciences, 3-540-56395-4
• Silicon Devices and Process Integration, Texte imprimé, 9781441942241
Kazalo:
  • Properties of the Silicon Crystal. Valence-bond and energy-band models. Thermal equilibrium statistics. Carrier transport mechanisms. Non-equilibrium conditions and carrier lifetime
  • Junctions and Contacts. Ohmic, non-ohmic, and rectifying contacts. PN junctions, homo- and hetero-junctions. Contact und junction characterization, parameter extraction. Varactors
  • Junction Field-Effect Transistor, JFET. Structure and mode of operation. Physics of JFET. JFET characterization and parameter extraction. High-voltage applications. Parasitic effects
  • Bipolar Junction Transistor, BJT. Structure and mode of operation. Physics of BJT. Heterojunction Bipolar Transistor, HBT. Transistor characterization and parameter extraction. High-voltage applications
  • Parasitic effects.