Defect-oriented testing for nano-metric CMOS VLSI circuits : 2nd edition
Failures of nano-metric technologies owing to defects and shrinking process tolerances give rise to significant challenges for IC testing. As the variation of fundamental parameters such as channel length, threshold voltage, thin oxide thickness and interconnect dimensions goes well beyond acceptabl...
Gorde:
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| Beste egile batzuk: | |
| Formatua: | Livre numérique |
| Hizkuntza: | Anglais |
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New York, NY :
Springer US : Imprint: Springer
[20..].
Cham : Springer Nature |
| Saila: | Frontiers in electronic testing
34 |
| Sarrera elektronikoa: | Accès sur la plateforme de l'éditeur Accès sur la plateforme Istex Accès Université d'Orléans Accès INSA CVL |
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Archives Springer e-books (Licence nationale) Archives Springer e-books (Licence nationale) |
| Autres localisations: | Voir dans le Sudoc |
| Edition sous un autre format: | • Defect-Oriented Testing for Nano-Metric CMOS VLSI Circuits, Texte imprimé, 9780387465463 |
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| 100 | 1 | |a Sachdev, Manoj, |d 19..- | |
| 245 | 1 | 0 | |a Defect-oriented testing for nano-metric CMOS VLSI circuits : |b 2nd edition |c edited by Manoj Sachdev, José Pineda de Gyvez. |
| 260 | |a New York, NY : |b Springer US : |b Imprint: Springer. | ||
| 260 | |a Cham : |b Springer Nature, |c [20..]. | ||
| 490 | 0 | |a Frontiers in electronic testing |v 34 |x 0929-1296 | |
| 500 | |a Archives Springer e-books (Licence nationale) | ||
| 500 | |a Archives Springer e-books (Licence nationale) | ||
| 505 | 1 | |a Functional and Parametric Defect Models Digital CMOS Fault Modeling Defects in Logic Circuits and their Test Implications Testing Defects and Parametric Variations in RAMs Defect-Oriented Analog Testing Yield Engineering Conclusion | |
| 506 | |a Accès en ligne pour les établissements français bénéficiaires des licences nationales | ||
| 506 | |a Accès soumis à abonnement pour tout autre établissement | ||
| 506 | |a Conditions particulières de réutilisation pour les bénéficiaires des licences nationales. https://www.licencesnationales.fr/springer-nature-ebooks-contrat-licence-ln-2017 | ||
| 520 | |a Failures of nano-metric technologies owing to defects and shrinking process tolerances give rise to significant challenges for IC testing. As the variation of fundamental parameters such as channel length, threshold voltage, thin oxide thickness and interconnect dimensions goes well beyond acceptable limits, new test methodologies and a deeper insight into the physics of defect-fault mappings are needed. In Defect-Oriented Testing for Nano-Metric CMOS VLSI Circuits state of the art of defect-oriented testing is presented from both a theoretical approach as well as from a practical point of view. Step-by-step handling of defect modeling, defect-oriented testing, yield modeling and its usage in common economics practices enables deeper understanding of concepts. The progression developed in this book is essential to understand new test methodologies, algorithms and industrial practices. Without the insight into the physics of nano-metric technologies, it would be hard to develop system-level test strategies that yield a high IC fault coverage. Obviously, the work on defect-oriented testing presented in the book is not final, and it is an evolving field with interesting challenges imposed by the ever-changing nature of nano-metric technologies. Test and design practitioners from academia and industry will find that Defect-Oriented Testing for Nano-Metric CMOS VLSI Circuits lays the foundations for further pioneering work | ||
| 700 | 1 | |a Pineda de Gyvez, José, |c électronicien. |4 pbd | |
| 776 | 0 | |t Defect-Oriented Testing for Nano-Metric CMOS VLSI Circuits |b Texte imprimé |z 9780387465463 | |
| 856 | 4 | |q PDF |u https://doi.org/10.1007/0-387-46547-2 |z Accès sur la plateforme de l'éditeur | |
| 856 | 4 | |u https://revue-sommaire.istex.fr/ark:/67375/8Q1-4QBW1RNR-5 |z Accès sur la plateforme Istex | |
| 856 | 4 | |5 452349901:747889155 |u https://ezproxy.univ-orleans.fr/login?url=https://doi.org/10.1007/0-387-46547-2 |z Accès Université d'Orléans | |
| 856 | 4 | |5 180339901:750902221 |u https://ezproxy.insa-cvl.fr/login?qurl=https://doi.org/10.1007/0-387-46547-2 |z Accès INSA CVL | |
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