Gettering defects in semiconductors

Gettering Defects in Semiconductors fulfills three basic purposes: to systematize the experience and research in exploiting various gettering techniques in microelectronics and nanoelectronics; to identify new directions in research, particularly to enhance the perspective of professionals and young...

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Chi tiết về thư mục
Những tác giả chính: Perevostchikov, Viktor A., Skupov, Vladimir Dmitrievich (Tác giả)
Định dạng: Livre numérique
Ngôn ngữ:Anglais
Được phát hành: Berlin, Heidelberg : Springer Berlin Heidelberg [20..].
Cham : Springer Nature
Phiên bản:1st ed. 2005.
Loạt:Springer Series in Advanced Microelectronics 19
Truy cập trực tuyến:Accès sur la plateforme de l'éditeur
Accès sur la plateforme Istex
Accès Université d'Orléans
Accès INSA CVL
Chú thích: Archives Springer e-books (Licence nationale)
Archives Springer e-books (Licence nationale)
Autres localisations: Voir dans le Sudoc
Edition sous un autre format:• Gettering defects in semiconductors, V.A. Perevostchikov, V.D. Skoupov, Berlin, Springer, 2005, 1 vol. (XV-386 p.), Springer series in advanced microelectronics, 3-540-26244-X
• Gettering Defects in Semiconductors, Texte imprimé, 9783540811954
• Gettering Defects in Semiconductors, Texte imprimé, 9783642065705
• Gettering defects in semiconductors, V.A. Perevostchikov, V.D. Skoupov, Berlin, Springer, 2005, 1 vol. (XV-386 p.), Springer series in advanced microelectronics, 3-540-26244-X
Mục lục:
  • Basic technological processes and defect formation in the components of device structures Effects of defects on electrophysical and functional parameters in semiconducting structures and devices Techniques for high-temperature gettering Physical foundations for low-temperature gettering techniques