GaN and ZnO-based Materials and Devices

The AlInGaN and ZnO materials systems have proven to be one of the scientifically and technologically important areas of development over the past 15 years, with applications in UV/visible optoelectronics and in high-power/high-frequency microwave devices. The pace of advances in these areas has bee...

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Dades bibliogràfiques
Autor principal: Pearton, Stephen J., 1957-
Altres autors: Pearton, Stephen (Director editorial)
Format: Livre numérique
Idioma:Anglais
Publicat: Berlin, Heidelberg : Springer Berlin Heidelberg 2012.
Cham : Springer Nature
Col·lecció:Springer Series in Materials Science 156
Accés en línia:Accès sur la plateforme de l'éditeur
Accès sur la plateforme Istex
Accès Université d'Orléans
Accès INSA CVL
Nota: Archives Springer e-books (Licence nationale)
Archives Springer e-books (Licence nationale)
Autres localisations: Voir dans le Sudoc
Edition sous un autre format:• GaN and ZnO-based Materials and Devices, Texte imprimé, 9783642235207
• GaN and ZnO-based Materials and Devices, Texte imprimé, 9783642235221
• GaN and ZnO-based Materials and Devices, Texte imprimé, 9783642433238
Taula de continguts:
  • UV LEDs
  • Non-Polar GaN Growth
  • High-Quality AlGaN Alloys
  • Bulk AlN for UV LEDs
  • Enhancement of the Light-Extraction Efficiency of GaN-Based Light Emitting Diodes
  • GaN-Based Sensors
  • III-N Alloys for Solar Power Conversion
  • GaN HEMT Technology
  • GaN Power Devices
  • Nitride Nanostructures
  • Radiation-Induced Defects in GaN
  • Electron Injection Effects in GaN
  • Progress and Prospect of Rare-Earth Nitrides
  • Advances in PLD of ZnO and Related Compounds
  • ZnO Nanowires and p-Type Doping
  • Multifunctional ZnO Structures
  • ZnO/MgZnO Quantum Wells
  • GZO TFTs.