Transmission electron microscopy of semiconductor nanostructures : an analysis of composition and strain state
This book provides tools well suited for the quantitative investigation of semiconductor electron microscopy. These tools allow for the accurate determination of the composition of ternary semiconductor nanostructures with a spatial resolution at near atomic scales. The book focuses on new methods i...
Guardat en:
| Autor principal: | |
|---|---|
| Format: | Livre numérique |
| Idioma: | Anglais |
| Publicat: |
Berlin [etc.] :
Springer
[20..].
Cham : Springer Nature |
| Col·lecció: | Springer tracts in modern physics
182 |
| Matèries: | |
| Accés en línia: | Accès sur la plateforme de l'éditeur Accès sur la plateforme Istex Accès Université d'Orléans Accès INSA CVL |
| Nota: |
Archives Springer e-books (Licence nationale) Archives Springer e-books (Licence nationale) |
| Autres localisations: | Voir dans le Sudoc |
| Edition sous un autre format: | • Transmission electron microscopy of semiconductor nanostructures, an analysis of composition and strain state, Andreas Rosenauer, New York, Springer, 2003, 1 vol. (XII-238 p.), Springer tracts in modern physics, 3-540-00414-9 • Transmission Electron Microscopy of Semiconductor Nanostructures, Texte imprimé, 9783662146170 • Transmission Electron Microscopy of Semiconductor Nanostructures, Texte imprimé, 9783662146187 |
Taula de continguts:
- Theoretical Fundamentals of Transmission Electron Microscopy
- Electron Diffraction
- Image Formation
- Digital Image Analysis
- Strain State Analysis
- Lattice Fringe Analysis
- Applications
- In0.6Ga0.4As/GaAs(001) SK Layers
- InAs Quantum Dots
- Electron Holography: AlAs/GaAs Superlattices
- Outlook.