Transmission electron microscopy of semiconductor nanostructures : an analysis of composition and strain state

This book provides tools well suited for the quantitative investigation of semiconductor electron microscopy. These tools allow for the accurate determination of the composition of ternary semiconductor nanostructures with a spatial resolution at near atomic scales. The book focuses on new methods i...

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Autor principal: Rosenauer, Andreas, 1964-
Format: Livre numérique
Idioma:Anglais
Publicat: Berlin [etc.] : Springer [20..].
Cham : Springer Nature
Col·lecció:Springer tracts in modern physics 182
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Edition sous un autre format:• Transmission electron microscopy of semiconductor nanostructures, an analysis of composition and strain state, Andreas Rosenauer, New York, Springer, 2003, 1 vol. (XII-238 p.), Springer tracts in modern physics, 3-540-00414-9
• Transmission Electron Microscopy of Semiconductor Nanostructures, Texte imprimé, 9783662146170
• Transmission Electron Microscopy of Semiconductor Nanostructures, Texte imprimé, 9783662146187
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245 1 0 |a Transmission electron microscopy of semiconductor nanostructures :  |b an analysis of composition and strain state   |c Andreas Rosenauer. 
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505 0 |a Theoretical Fundamentals of Transmission Electron Microscopy -- Electron Diffraction -- Image Formation -- Digital Image Analysis -- Strain State Analysis -- Lattice Fringe Analysis -- Applications -- In0.6Ga0.4As/GaAs(001) SK Layers -- InAs Quantum Dots -- Electron Holography: AlAs/GaAs Superlattices -- Outlook. 
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520 |a This book provides tools well suited for the quantitative investigation of semiconductor electron microscopy. These tools allow for the accurate determination of the composition of ternary semiconductor nanostructures with a spatial resolution at near atomic scales. The book focuses on new methods including strain state analysis as well as evaluation of the composition via the lattice fringe analysis (CELFA) technique. The basics of these procedures as well as their advantages, drawbacks and sources of error are all discussed. The techniques are applied to quantum wells and dots in order to give insight into kinetic growth effects such as segregation and migration. In the first part of the book the fundamentals of transmission electron microscopy are provided. These are needed for an understanding of the digital image analysis techniques described in the second part of the book. There the reader will find information on different methods of composition determination. The third part of the book focuses on applications such as composition determination in InGaAs Stranski--Krastanov quantum dots. Finally it is shown how an improvement in the precision of the composition evaluation can be obtained by combining CELFA with electron holography. This is demonstrated for an AlAs/GaAs superlattice. 
650 |a Semiconducteurs  |x Analyse 
650 |a Semiconducteurs  |x Microscopie 
650 |a Microscopie électronique 
650 |a Microscopie électronique en transmission 
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776 0 |t Transmission Electron Microscopy of Semiconductor Nanostructures  |b Texte imprimé  |z 9783662146170 
776 0 |t Transmission Electron Microscopy of Semiconductor Nanostructures  |b Texte imprimé  |z 9783662146187 
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