Strain-Induced Effects in Advanced MOSFETs
Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. The subband structure in stressed semiconductor fil...
Sparad:
| Huvudupphovsman: | |
|---|---|
| Materialtyp: | Livre numérique |
| Språk: | Anglais |
| Publicerad: |
Vienna :
Springer Vienna
[20..].
Cham : Springer Nature |
| Upplaga: | 1st ed. 2011. |
| Serie: | Computational Microelectronics
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| Länkar: | Accès sur la plateforme de l'éditeur Accès sur la plateforme Istex Accès Université d'Orléans Accès INSA CVL |
| Anmärkning: |
Archives Springer e-books (Licence nationale) Archives Springer e-books (Licence nationale) |
| Autres localisations: | Voir dans le Sudoc |
| Edition sous un autre format: | • Strain-Induced Effects in Advanced MOSFETs, Texte imprimé, 9783709103814 • Strain-Induced Effects in Advanced MOSFETs, Texte imprimé, 9783709103838 • Strain-Induced Effects in Advanced MOSFETs, Texte imprimé, 9783709119334 |
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| 009 | PPN149907591 | ||
| 020 | |a 9783709103821 | ||
| 041 | 0 | |a eng | |
| 082 | |a 621.381 | ||
| 100 | 1 | |a Sverdlov, Viktor. | |
| 245 | 1 | 0 | |a Strain-Induced Effects in Advanced MOSFETs |c by Viktor Sverdlov. |
| 250 | |a 1st ed. 2011. | ||
| 260 | |a Vienna : |b Springer Vienna. | ||
| 260 | |a Cham : |b Springer Nature, |c [20..]. | ||
| 490 | 0 | |a Computational Microelectronics | |
| 500 | |a Archives Springer e-books (Licence nationale) | ||
| 500 | |a Archives Springer e-books (Licence nationale) | ||
| 506 | |a Accès en ligne pour les établissements français bénéficiaires des licences nationales | ||
| 506 | |a Accès soumis à abonnement pour tout autre établissement | ||
| 506 | |a Conditions particulières de réutilisation pour les bénéficiaires des licences nationales. https://www.licencesnationales.fr/springer-nature-ebooks-contrat-licence-ln-2017 | ||
| 520 | |a Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. The subband structure in stressed semiconductor films is investigated in devices using analytical k.p and numerical pseudopotential methods. A rigorous overview of transport modeling in strained devices is given | ||
| 776 | 0 | |t Strain-Induced Effects in Advanced MOSFETs |b Texte imprimé |z 9783709103814 | |
| 776 | 0 | |t Strain-Induced Effects in Advanced MOSFETs |b Texte imprimé |z 9783709103838 | |
| 776 | 0 | |t Strain-Induced Effects in Advanced MOSFETs |b Texte imprimé |z 9783709119334 | |
| 856 | 4 | |q PDF |u https://doi.org/10.1007/978-3-7091-0382-1 |z Accès sur la plateforme de l'éditeur | |
| 856 | 4 | |u https://revue-sommaire.istex.fr/ark:/67375/8Q1-631RB7FK-8 |z Accès sur la plateforme Istex | |
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| 856 | 4 | |5 180339901:753980363 |u https://ezproxy.insa-cvl.fr/login?qurl=https://dx.doi.org/10.1007/978-3-7091-0382-1 |z Accès INSA CVL | |
| 997 | |0 968250 |1 Livre numérique |a Ressource numérique |b INSA |b ENSA |c 0/Bibliothèque numérique/ |c 1/Bibliothèque numérique/Autre ressource numérique/ | ||