Epitaxy of semiconductors : introduction to physical principles

Introduction to Epitaxy provides the essential information for a comprehensive upper-level graduate course treating the crystalline growth of semiconductor heterostructures. Heteroepitaxy represents the basis of advanced electronic and optoelectronic devices today and is considered one of the top fi...

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Détails bibliographiques
Auteur principal: Pohl, Udo W.
Format: Livre numérique
Langue:Anglais
Publié: Berlin, Heidelberg : Springer Berlin Heidelberg 2013.
Cham : Springer Nature
Collection:Graduate Texts in Physics
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Note: Archives Springer e-books (Licence nationale)
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Edition sous un autre format:• Epitaxy of semiconductors, introduction to physical principles, Udo W. Pohl, Heidelberg, Springer-Verlag, 2013, 1 vol. (xiv-325 p.), Graduate texts in physics, 978-3-642-32969-2
• Epitaxy of Semiconductors, Texte imprimé, 9783642329715
• Epitaxy of Semiconductors, Texte imprimé, 9783642433313
Description
Résumé:Introduction to Epitaxy provides the essential information for a comprehensive upper-level graduate course treating the crystalline growth of semiconductor heterostructures. Heteroepitaxy represents the basis of advanced electronic and optoelectronic devices today and is considered one of the top fields in materials research. The book covers the structural and electronic properties of strained epitaxial layers, the thermodynamics and kinetics of layer growth, and the description of the major growth techniques metalorganic vapor phase epitaxy, molecular beam epitaxy and liquid phase epitaxy. Cubic semiconductors, strain relaxation by misfit dislocations, strain and confinement effects on electronic states, surface structures and processes during nucleation and growth are treated in detail. The Introduction to Epitaxy requires only little knowledge on solid-state physics. Students of natural sciences, materials science and electrical engineering as well as their lecturers benefit from elementary introductions to theory and practice of epitaxial growth, supported by pertinent references and over 200 detailed illustrations.
Description:Archives Springer e-books (Licence nationale)
Archives Springer e-books (Licence nationale)
ISBN:9783642329708
ISSN:1868-4521
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