Analog IC reliability in nanometer CMOS
This book focuses on modeling, simulation and analysis of analog circuit aging. First, all important nanometer CMOS physical effects resulting in circuit unreliability are reviewed. Then, transistor aging compact models for circuit simulation are discussed and several methods for efficient circuit r...
Guardat en:
| Autors principals: | , |
|---|---|
| Format: | Livre numérique |
| Idioma: | Anglais |
| Publicat: |
New York, NY :
Springer New York
2013.
Cham : Springer Nature |
| Col·lecció: | Analog Circuits and Signal Processing
|
| Accés en línia: | Accès sur la plateforme de l'éditeur Accès sur la plateforme Istex Accès Université d'Orléans Accès INSA CVL |
| Nota: |
Archives Springer e-books (Licence nationale) Archives Springer e-books (Licence nationale) |
| Autres localisations: | Voir dans le Sudoc |
| Edition sous un autre format: | • Analog IC Reliability in Nanometer CMOS, Texte imprimé, 9781461461623 • Analog IC Reliability in Nanometer CMOS, Texte imprimé, 9781489986306 • Analog IC Reliability in Nanometer CMOS, Texte imprimé, 9781461461647 |
Taula de continguts:
- Introduction
- CMOS Reliability Overview
- Transistor Aging Compact Modeling
- Background on IC Reliability Simulation
- Analog IC Reliability Simulation
- Integrated Circuit Reliability
- Conclusions.