Materials and Reliability Handbook for Semiconductor Optical and Electron Devices
Materials and Reliability Handbook for Semiconductor Optical and Electron Devices provides comprehensive coverage of reliability procedures and approaches for electron and photonic devices. These include lasers and high speed electronics used in cell phones, satellites, data transmission systems and...
Gardado en:
| Outros autores: | , |
|---|---|
| Formato: | Livre numérique |
| Idioma: | Anglais |
| Publicado: |
New York, NY :
Springer New York
2013.
Cham : Springer Nature |
| Acceso en liña: | Accès sur la plateforme de l'éditeur Accès sur la plateforme Istex Accès Université d'Orléans Accès INSA CVL |
| Nota: |
Archives Springer e-books (Licence nationale) Archives Springer e-books (Licence nationale) |
| Autres localisations: | Voir dans le Sudoc |
| Edition sous un autre format: | • Materials and reliability handbook for semiconductor optical and electron devices, Osamu Ueda, Stephen J. Pearton, editors, New York, Springer, 2012, 1 vol. (XV-616 p.), 978-1-4614-4336-0 |
| LEADER | 05124nam a22003137a 4500 | ||
|---|---|---|---|
| 001 | 949663 | ||
| 008 | 130325q2000 xx ||| |||| 00| 0 eng d | ||
| 009 | PPN168299925 | ||
| 020 | |a 9781461443377 | ||
| 041 | 0 | |a eng | |
| 082 | |a 621.36 | ||
| 245 | 0 | 0 | |a Materials and Reliability Handbook for Semiconductor Optical and Electron Devices |c edited by Osamu Ueda, Stephen J. Pearton. |
| 260 | |a New York, NY : |b Springer New York. | ||
| 260 | |a Cham : |b Springer Nature, |c 2013. | ||
| 500 | |a Archives Springer e-books (Licence nationale) | ||
| 500 | |a Archives Springer e-books (Licence nationale) | ||
| 505 | 1 | |a Preface Part 1. Materials Issues and Reliability of Optical Devices 1. Reliability Testing of Semiconductor Optical Devices 2. Failure Analysis of Semiconductor Optical Devices 3. Failure Analysis using Optical Evaluation Technique (OBIC) of LDs and APDs for Fiber Optical Communication 4. Reliability and Degradation of III-V Optical Devices Focusing on Gradual Degradation 5. Catastrophic Optical-damage in High Power, Broad-Area Laser-diodes 6. Reliability and Degradation of Vertical Cavity Surface Emitting Lasers 7. Structural Defects in GaN-based Materials and Their Relation to GaN-based Laser Diodes 8. InGaN Laser Diode Degradation 9. Radiation-enhanced Dislocation Glide - The Current Status of Research 10. Mechanism of Defect Reactions in Semiconductors Part 2. Materials Issues and Reliability of Electron Devices 11. Reliability Studies in the Real World 12. Strain Effects in AlGaN/GaN HEMTs 13. Reliability Issues in AlGaN/GaN High Electron Mobility Transistors 14. GaAs Device Reliability: High Electron Mobility Transistors and Heterojunction Bipolar Transistors 15. Novel Dielectrics for GaN Device Passivation And Improved Reliability 16. Reliability Simulation 17. The Analysis of Wide Bandgap Semiconductors Using Raman Spectroscopy 18. Reliability Study of InP-Based HBTs Operating at High Current Density Index | |
| 506 | |a Accès en ligne pour les établissements français bénéficiaires des licences nationales | ||
| 506 | |a Accès soumis à abonnement pour tout autre établissement | ||
| 506 | |a Conditions particulières de réutilisation pour les bénéficiaires des licences nationales. https://www.licencesnationales.fr/springer-nature-ebooks-contrat-licence-ln-2017 | ||
| 520 | |a Materials and Reliability Handbook for Semiconductor Optical and Electron Devices provides comprehensive coverage of reliability procedures and approaches for electron and photonic devices. These include lasers and high speed electronics used in cell phones, satellites, data transmission systems and displays. Lifetime predictions for compound semiconductor devices are notoriously inaccurate due to the absence of standard protocols. Manufacturers have relied on extrapolation back to room temperature of accelerated testing at elevated temperature. This technique fails for scaled, high current density devices. Device failure is driven by electric field or current mechanisms or low activation energy processes that are masked by other mechanisms at high temperature. The Handbook addresses reliability engineering for III-V devices, including materials and electrical characterization, reliability testing, and electronic characterization. These are used to develop new simulation technologies for device operation and reliability, which allow accurate prediction of reliability as well as the design specifically for improved reliability. The Handbook emphasizes physical mechanisms rather than an electrical definition of reliability. Accelerated aging is useful only if the failure mechanism is known. The Handbook also focuses on voltage and current acceleration stress mechanisms.Provides the first handbook to cover all aspects of compound semiconductor device reliabilitySystematically describes research results on reliability and materials issues of both optical and electron devices developed since 2000Covers characterization techniques needed to understand failure mechanisms in compound semiconductor devicesIncludes experimental approaches in reliability studiesPresents case studies of laser degradation and HEMT degradation | ||
| 700 | 1 | |a Ueda, Osamu. |4 pbd | |
| 700 | 1 | |a Pearton, Stephen J., |d 1957- |4 pbd | |
| 776 | 0 | |0 174228546 |t Materials and reliability handbook for semiconductor optical and electron devices |f Osamu Ueda, Stephen J. Pearton, editors |c New York |n Springer |d 2012 |p 1 vol. (XV-616 p.) |z 978-1-4614-4336-0 | |
| 856 | 4 | |q PDF |u https://doi.org/10.1007/978-1-4614-4337-7 |z Accès sur la plateforme de l'éditeur | |
| 856 | 4 | |u https://revue-sommaire.istex.fr/ark:/67375/8Q1-Q5F2PKWC-Z |z Accès sur la plateforme Istex | |
| 856 | 4 | |5 452349901:748111735 |u https://ezproxy.univ-orleans.fr/login?url=https://doi.org/10.1007/978-1-4614-4337-7 |z Accès Université d'Orléans | |
| 856 | 4 | |5 180339901:751566195 |u https://ezproxy.insa-cvl.fr/login?qurl=https://doi.org/10.1007/978-1-4614-4337-7 |z Accès INSA CVL | |
| 997 | |0 949663 |1 Livre numérique |a Ressource numérique |b INSA |b ENSA |c 0/Bibliothèque numérique/ |c 1/Bibliothèque numérique/Autre ressource numérique/ | ||