Ferroelectric random access memories : fundamentals and applications
In fabrication of FeRAMs, various academic and technological backgrounds are necessary, which include ferroelectric materials, thin film formation, device physics, circuit design, and so on.This book covers from fundamentals to applications of ferroelectric random access memories (FeRAMs). The book...
Tallennettuna:
| Muut tekijät: | , , |
|---|---|
| Aineistotyyppi: | Livre numérique |
| Kieli: | Anglais |
| Julkaistu: |
Berlin ; Paris [etc.] :
Springer-Verlag : Springer e-books
[20..].
Cham : Springer Nature |
| Sarja: | Topics in applied physics
93 |
| Aiheet: | |
| Linkit: | Accès sur la plateforme de l'éditeur Accès sur la plateforme Istex Accès Université d'Orléans Accès INSA CVL |
| Huomautus: |
Archives Springer e-books (Licence nationale) Archives Springer e-books (Licence nationale) |
| Autres localisations: | Voir dans le Sudoc |
| Edition sous un autre format: | • Ferroelectric random access memories, fundamentals and applications, Hiroshi Ishiwara, Masanori Okuyama, Yoshihiro Arimoto (eds.), Berlin, Springer, 2004, 1 vol. (XIII-290 p.), Topics in applied physics, 3-540-40718-9 • Ferroelectric Random Access Memories, Texte imprimé, 9783642073847 • Ferroelectric Random Access Memories, Texte imprimé, 9783662308233 |
Sisällysluettelo:
- Part I Ferroelectric Thin Films: Overview
- Novel Si-substituted Ferroelectric Films
- Static and Dynamic Properties of Domains
- Nanoscale Phenomena in Ferroelectric Thin Films
- Part II Deposition and Characterization Methods: Sputtering Techniques
- Chemical Approach Using Tailored Liquid Sources to Bi-based Layer-structured Perovskite Thin Films
- Recent Development of Ferroelectric Thin Films by MOCVD
- Materials Integration Strategies
- Characterization by Scanning Nonlinear Dielectric Microscopy
- Part III Fabrication Process and Circuit Design: Current Status of FeRAMs
- Operation Principle and Circuit Design Issues
- High Density Integration
- Testing and Reliability
- Part IV Advanced-Type Memories: Chain FeRAMs
- Capacitor-on-Metal/Via-stacked-Plug (CMVP) Memory Cell and Application to a Non-volatile SRAM
- FET-type FeRAMs
- Part V Applications and Future Prospects: Application to Future Information Technology World
- Subject Index.