Ferroelectric random access memories : fundamentals and applications
In fabrication of FeRAMs, various academic and technological backgrounds are necessary, which include ferroelectric materials, thin film formation, device physics, circuit design, and so on.This book covers from fundamentals to applications of ferroelectric random access memories (FeRAMs). The book...
Shranjeno v:
| Drugi avtorji: | , , |
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| Format: | Livre numérique |
| Jezik: | Anglais |
| Izdano: |
Berlin ; Paris [etc.] :
Springer-Verlag : Springer e-books
[20..].
Cham : Springer Nature |
| Serija: | Topics in applied physics
93 |
| Teme: | |
| Online dostop: | Accès sur la plateforme de l'éditeur Accès sur la plateforme Istex Accès Université d'Orléans Accès INSA CVL |
| Sporočilo: |
Archives Springer e-books (Licence nationale) Archives Springer e-books (Licence nationale) |
| Autres localisations: | Voir dans le Sudoc |
| Edition sous un autre format: | • Ferroelectric random access memories, fundamentals and applications, Hiroshi Ishiwara, Masanori Okuyama, Yoshihiro Arimoto (eds.), Berlin, Springer, 2004, 1 vol. (XIII-290 p.), Topics in applied physics, 3-540-40718-9 • Ferroelectric Random Access Memories, Texte imprimé, 9783642073847 • Ferroelectric Random Access Memories, Texte imprimé, 9783662308233 |
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| 001 | 948600 | ||
| 008 | 110927q2000 xxe ||| |||| 00| 0 eng d | ||
| 009 | PPN15517505X | ||
| 020 | |a 9783540451631 (PDF) | ||
| 041 | 0 | |a eng | |
| 082 | |a 540 | ||
| 245 | 0 | 0 | |a Ferroelectric random access memories : |b fundamentals and applications |c [edited by] Hiroshi Ishiwara, Masanori Okuyama, Yoshihiro Arimoto. |
| 260 | |a Berlin ; |a Paris [etc.] : |b Springer-Verlag : |b Springer e-books. | ||
| 260 | |a Cham : |b Springer Nature, |c [20..]. | ||
| 490 | 0 | |a Topics in applied physics |v 93 |x 1437-0859 | |
| 500 | |a Archives Springer e-books (Licence nationale) | ||
| 500 | |a Archives Springer e-books (Licence nationale) | ||
| 505 | 0 | |a Part I Ferroelectric Thin Films: Overview -- Novel Si-substituted Ferroelectric Films -- Static and Dynamic Properties of Domains -- Nanoscale Phenomena in Ferroelectric Thin Films -- Part II Deposition and Characterization Methods: Sputtering Techniques -- Chemical Approach Using Tailored Liquid Sources to Bi-based Layer-structured Perovskite Thin Films -- Recent Development of Ferroelectric Thin Films by MOCVD -- Materials Integration Strategies -- Characterization by Scanning Nonlinear Dielectric Microscopy -- Part III Fabrication Process and Circuit Design: Current Status of FeRAMs -- Operation Principle and Circuit Design Issues -- High Density Integration -- Testing and Reliability -- Part IV Advanced-Type Memories: Chain FeRAMs -- Capacitor-on-Metal/Via-stacked-Plug (CMVP) Memory Cell and Application to a Non-volatile SRAM -- FET-type FeRAMs -- Part V Applications and Future Prospects: Application to Future Information Technology World -- Subject Index. | |
| 506 | |a Accès en ligne pour les établissements français bénéficiaires des licences nationales | ||
| 506 | |a Accès soumis à abonnement pour tout autre établissement | ||
| 506 | |a Conditions particulières de réutilisation pour les bénéficiaires des licences nationales. https://www.licencesnationales.fr/springer-nature-ebooks-contrat-licence-ln-2017 | ||
| 520 | |a In fabrication of FeRAMs, various academic and technological backgrounds are necessary, which include ferroelectric materials, thin film formation, device physics, circuit design, and so on.This book covers from fundamentals to applications of ferroelectric random access memories (FeRAMs). The book consists of 5 parts; (1) ferroelectric thin films, (2) deposition and characterization methods, (3) fabrication process and circuit design, (4) advanced-type memories, and (5) applications and future prospects, and each part is further devided in several chapters. Because of the wide range of the discussed topics, each chapter in this book was written by one of the best authors knowing the specific topic very well. Thus, this is a good introduction book of FeRAM for graduate students and new comers to this field, as well as it helps specialists to understand FeRAMs more deeply. | ||
| 650 | |a Métaux | ||
| 650 | |a Chimie | ||
| 650 | |a Physique de l'état solide | ||
| 650 | |a Ordinateurs | ||
| 650 | |a Ordinateurs |x Mémoires à accès sélectif | ||
| 650 | |a Couches minces ferroélectriques | ||
| 650 | |a Matière condensée | ||
| 700 | 1 | |a Ishiwara, Hiroshi, |d 1945- |4 edt | |
| 700 | 1 | |a Arimoto, Yoshihiro, |d 1952- |4 edt | |
| 700 | 1 | |a Okuyama, Masanori, |d 1946- |4 edt | |
| 776 | 0 | |0 083844953 |t Ferroelectric random access memories |o fundamentals and applications |f Hiroshi Ishiwara, Masanori Okuyama, Yoshihiro Arimoto (eds.) |c Berlin |n Springer |d 2004 |p 1 vol. (XIII-290 p.) |s Topics in applied physics |z 3-540-40718-9 | |
| 776 | 0 | |t Ferroelectric Random Access Memories |b Texte imprimé |z 9783642073847 | |
| 776 | 0 | |t Ferroelectric Random Access Memories |b Texte imprimé |z 9783662308233 | |
| 856 | 4 | |q PDF |u https://doi.org/10.1007/b12953 |z Accès sur la plateforme de l'éditeur | |
| 856 | 4 | |u https://revue-sommaire.istex.fr/ark:/67375/8Q1-G35WZ8Z8-M |z Accès sur la plateforme Istex | |
| 856 | 4 | |5 452349901:748051236 |u https://ezproxy.univ-orleans.fr/login?url=https://doi.org/10.1007/b12953 |z Accès Université d'Orléans | |
| 856 | 4 | |5 180339901:751502448 |u https://ezproxy.insa-cvl.fr/login?qurl=https://doi.org/10.1007/b12953 |z Accès INSA CVL | |
| 997 | |0 948600 |1 Livre numérique |a Ressource numérique |b INSA |b ENSA |c 0/Bibliothèque numérique/ |c 1/Bibliothèque numérique/Autre ressource numérique/ | ||