Lifetime Spectroscopy : A Method of Defect Characterization in Silicon for Photovoltaic Applications
Lifetime spectroscopy is one of the most sensitive diagnostic tools for the identification and analysis of impurities in semiconductors. Since it is based on the recombination process, it provides insight into precisely those defects that are relevant to semiconductor devices such as solar cells. Th...
保存先:
| 第一著者: | |
|---|---|
| フォーマット: | Livre numérique |
| 言語: | Anglais |
| 出版事項: |
Berlin, Heidelberg :
Springer Berlin Heidelberg
[20..].
Cham : Springer Nature |
| 版: | 1st ed. 2005. |
| シリーズ: | Springer Series in Materials Science
85 |
| オンライン･アクセス: | Accès sur la plateforme de l'éditeur Accès sur la plateforme Istex Accès Université d'Orléans Accès INSA CVL |
| 注記: |
Archives Springer e-books (Licence nationale) Archives Springer e-books (Licence nationale) |
| Autres localisations: | Voir dans le Sudoc |
| Edition sous un autre format: | • Lifetime spectroscopy, a method of defect characterization in silicon for photovoltaic applications, S. Rein, Berlin, Springer, 2005, 1 vol (XXVI-489 p.), Springer series in material science, 3-540-25303-3 |
目次:
- Theory of carrier lifetime in silicon Lifetime measurement techniques Theory of lifetime spectroscopy Defect characterization on intentionally metal-contaminated silicon samples The metastable defect in boron-doped Czochralski silicon Summary and further work Zusammenfassung und Ausblick