Ferroelectric Thin Films : Basic Properties and Device Physics for Memory Applications
Ferroelectric thin films continue to attract much attention due to their developing, diverse applications in memory devices, FeRAM, infrared sensors, piezoelectric sensors and actuators. This book, aimed at students, researchers and developers, gives detailed information about the basic properties o...
محفوظ في:
| المؤلف الرئيسي: | |
|---|---|
| مؤلفون آخرون: | |
| التنسيق: | Livre numérique |
| اللغة: | Anglais |
| منشور في: |
Berlin, Heidelberg :
Springer Berlin Heidelberg
[20..].
Cham : Springer Nature |
| الطبعة: | 1st ed. 2005. |
| سلاسل: | Topics in Applied Physics
98 |
| الموضوعات: | |
| الوصول للمادة أونلاين: | Accès sur la plateforme de l'éditeur Accès sur la plateforme Istex Accès Université d'Orléans Accès INSA CVL |
| ملاحظة: |
Archives Springer e-books (Licence nationale) Archives Springer e-books (Licence nationale) |
| Autres localisations: | Voir dans le Sudoc |
| Edition sous un autre format: | • Ferroelectric thin films, basic properties and device physics for memory applications, Masanori Okuyama, Yoshihiro Ishibashi (eds.), Berlin, Springer, 2005, 1 vol. (XIII-244 p.), Topics in applied physics, 3-540-24163-9 • Ferroelectric Thin Films, Texte imprimé, 9783642063305 • Ferroelectric Thin Films, Texte imprimé, 9783540806295 • Ferroelectric thin films, basic properties and device physics for memory applications, Masanori Okuyama, Yoshihiro Ishibashi (eds.), Berlin, Springer, 2005, 1 vol. (XIII-244 p.), Topics in applied physics, 3-540-24163-9 |
جدول المحتويات:
- Theoretical Aspects of Phase Transitions in Ferroelectric Thin Films Chemical Solution Deposition of Layered-Structured Ferroelectric Thin Films PB-Based Ferroelectric Thin Films Prepared by MOCVD Spontaneous Polarization and Crystal Orientation Control of MOCVD PZT and Bi4Ti3O12-Based Films Rhombohedral PZT Thin Films Prepared by Sputtering Scanning Nonlinear Dielectric Microscope Analysis of Ferroelectricity and Enhanced Piezoelectricity near Morphotropic Phase Boundary Correlation between Domain Structures in Dielectric Properties in Single Crystals of Ferroelectric Solid Solutions Relaxor Behaviors in Perovskite-Type Dielectric Compounds Artificial Control of Ordered/Disordered State of B-Site Ions in Ba(Zr,Ti)O3 by a Superlattice Technique Physics of Ferroelectric Interface: An Attempt to Nano-Ferrolectric Physics Preparation and Property of Ferroelectic-Insulator-Semiconductor Junction Using YMNO3 Thin Film Improvement of Memory Retention in Metal-Ferroelectric-Insulator-Semiconductor (MFIS) Structure