Ferroelectric Thin Films : Basic Properties and Device Physics for Memory Applications
Ferroelectric thin films continue to attract much attention due to their developing, diverse applications in memory devices, FeRAM, infrared sensors, piezoelectric sensors and actuators. This book, aimed at students, researchers and developers, gives detailed information about the basic properties o...
Gardado en:
| Autor Principal: | |
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| Outros autores: | |
| Formato: | Livre numérique |
| Idioma: | Anglais |
| Publicado: |
Berlin, Heidelberg :
Springer Berlin Heidelberg
[20..].
Cham : Springer Nature |
| Edición: | 1st ed. 2005. |
| Series: | Topics in Applied Physics
98 |
| Sujets: | |
| Acceso en liña: | Accès sur la plateforme de l'éditeur Accès sur la plateforme Istex Accès Université d'Orléans Accès INSA CVL |
| Nota: |
Archives Springer e-books (Licence nationale) Archives Springer e-books (Licence nationale) |
| Autres localisations: | Voir dans le Sudoc |
| Edition sous un autre format: | • Ferroelectric thin films, basic properties and device physics for memory applications, Masanori Okuyama, Yoshihiro Ishibashi (eds.), Berlin, Springer, 2005, 1 vol. (XIII-244 p.), Topics in applied physics, 3-540-24163-9 • Ferroelectric Thin Films, Texte imprimé, 9783642063305 • Ferroelectric Thin Films, Texte imprimé, 9783540806295 • Ferroelectric thin films, basic properties and device physics for memory applications, Masanori Okuyama, Yoshihiro Ishibashi (eds.), Berlin, Springer, 2005, 1 vol. (XIII-244 p.), Topics in applied physics, 3-540-24163-9 |