Ferroelectric Thin Films : Basic Properties and Device Physics for Memory Applications
Ferroelectric thin films continue to attract much attention due to their developing, diverse applications in memory devices, FeRAM, infrared sensors, piezoelectric sensors and actuators. This book, aimed at students, researchers and developers, gives detailed information about the basic properties o...
Shranjeno v:
| Glavni avtor: | |
|---|---|
| Drugi avtorji: | |
| Format: | Livre numérique |
| Jezik: | Anglais |
| Izdano: |
Berlin, Heidelberg :
Springer Berlin Heidelberg
[20..].
Cham : Springer Nature |
| Izdaja: | 1st ed. 2005. |
| Serija: | Topics in Applied Physics
98 |
| Teme: | |
| Online dostop: | Accès sur la plateforme de l'éditeur Accès sur la plateforme Istex Accès Université d'Orléans Accès INSA CVL |
| Sporočilo: |
Archives Springer e-books (Licence nationale) Archives Springer e-books (Licence nationale) |
| Autres localisations: | Voir dans le Sudoc |
| Edition sous un autre format: | • Ferroelectric thin films, basic properties and device physics for memory applications, Masanori Okuyama, Yoshihiro Ishibashi (eds.), Berlin, Springer, 2005, 1 vol. (XIII-244 p.), Topics in applied physics, 3-540-24163-9 • Ferroelectric Thin Films, Texte imprimé, 9783642063305 • Ferroelectric Thin Films, Texte imprimé, 9783540806295 • Ferroelectric thin films, basic properties and device physics for memory applications, Masanori Okuyama, Yoshihiro Ishibashi (eds.), Berlin, Springer, 2005, 1 vol. (XIII-244 p.), Topics in applied physics, 3-540-24163-9 |
| LEADER | 04174nam a22004817a 4500 | ||
|---|---|---|---|
| 001 | 948296 | ||
| 008 | 080409q2000 xx ||| |||| 00| 0 eng d | ||
| 009 | PPN123090601 | ||
| 020 | |a 9783540314790 | ||
| 041 | 0 | |a eng | |
| 082 | |a 538 | ||
| 082 | |a 530 | ||
| 100 | 1 | |a Ishibashi, Yoshihiro. | |
| 245 | 1 | 0 | |a Ferroelectric Thin Films : |b Basic Properties and Device Physics for Memory Applications |c edited by Yoshihiro Ishibashi, Masanori Okuyama. |
| 250 | |a 1st ed. 2005. | ||
| 260 | |a Berlin, Heidelberg : |b Springer Berlin Heidelberg. | ||
| 260 | |a Cham : |b Springer Nature, |c [20..]. | ||
| 490 | 0 | |a Topics in Applied Physics |v 98 |x 1437-0859 | |
| 500 | |a Archives Springer e-books (Licence nationale) | ||
| 500 | |a Archives Springer e-books (Licence nationale) | ||
| 505 | 1 | |a Theoretical Aspects of Phase Transitions in Ferroelectric Thin Films Chemical Solution Deposition of Layered-Structured Ferroelectric Thin Films PB-Based Ferroelectric Thin Films Prepared by MOCVD Spontaneous Polarization and Crystal Orientation Control of MOCVD PZT and Bi4Ti3O12-Based Films Rhombohedral PZT Thin Films Prepared by Sputtering Scanning Nonlinear Dielectric Microscope Analysis of Ferroelectricity and Enhanced Piezoelectricity near Morphotropic Phase Boundary Correlation between Domain Structures in Dielectric Properties in Single Crystals of Ferroelectric Solid Solutions Relaxor Behaviors in Perovskite-Type Dielectric Compounds Artificial Control of Ordered/Disordered State of B-Site Ions in Ba(Zr,Ti)O3 by a Superlattice Technique Physics of Ferroelectric Interface: An Attempt to Nano-Ferrolectric Physics Preparation and Property of Ferroelectic-Insulator-Semiconductor Junction Using YMNO3 Thin Film Improvement of Memory Retention in Metal-Ferroelectric-Insulator-Semiconductor (MFIS) Structure | |
| 506 | |a Accès en ligne pour les établissements français bénéficiaires des licences nationales | ||
| 506 | |a Accès soumis à abonnement pour tout autre établissement | ||
| 506 | |a Conditions particulières de réutilisation pour les bénéficiaires des licences nationales. https://www.licencesnationales.fr/springer-nature-ebooks-contrat-licence-ln-2017 | ||
| 520 | |a Ferroelectric thin films continue to attract much attention due to their developing, diverse applications in memory devices, FeRAM, infrared sensors, piezoelectric sensors and actuators. This book, aimed at students, researchers and developers, gives detailed information about the basic properties of these materials and the associated device physics. All authors are acknowledged experts in the field | ||
| 650 | |a Magnétisme | ||
| 650 | |a Cristallographie | ||
| 650 | |a Couches minces | ||
| 650 | |a Métaux | ||
| 650 | |a Ferroélectricité | ||
| 650 | |a Ordinateurs |x Mémoires à accès sélectif | ||
| 650 | |a Couches minces ferroélectriques | ||
| 650 | |a Physique | ||
| 700 | 1 | |a Okuyama, Masanori, |d 1946- |4 pbd | |
| 776 | 0 | |0 08773298X |t Ferroelectric thin films |o basic properties and device physics for memory applications |f Masanori Okuyama, Yoshihiro Ishibashi (eds.) |c Berlin |n Springer |d 2005 |p 1 vol. (XIII-244 p.) |s Topics in applied physics |z 3-540-24163-9 | |
| 776 | 0 | |t Ferroelectric Thin Films |b Texte imprimé |z 9783642063305 | |
| 776 | 0 | |t Ferroelectric Thin Films |b Texte imprimé |z 9783540806295 | |
| 776 | 0 | |0 08773298X |t Ferroelectric thin films |o basic properties and device physics for memory applications |f Masanori Okuyama, Yoshihiro Ishibashi (eds.) |c Berlin |n Springer |d 2005 |p 1 vol. (XIII-244 p.) |s Topics in applied physics |z 3-540-24163-9 | |
| 856 | 4 | |q PDF |u https://doi.org/10.1007/b99517 |z Accès sur la plateforme de l'éditeur | |
| 856 | 4 | |u https://revue-sommaire.istex.fr/ark:/67375/8Q1-X21VXVFV-6 |z Accès sur la plateforme Istex | |
| 856 | 4 | |5 452349901:748043314 |u https://ezproxy.univ-orleans.fr/login?url=https://dx.doi.org/10.1007/b99517 |z Accès Université d'Orléans | |
| 856 | 4 | |5 180339901:751494437 |u https://ezproxy.insa-cvl.fr/login?qurl=https://dx.doi.org/10.1007/b99517 |z Accès INSA CVL | |
| 997 | |0 948296 |1 Livre numérique |a Ressource numérique |b INSA |b ENSA |c 0/Bibliothèque numérique/ |c 1/Bibliothèque numérique/Autre ressource numérique/ | ||