Zinc oxide : a material for micro- and optoelectronic applications
Recently, a significant effort has been devoted to the investigation of ZnO as a suitable semiconductor for UV light-emitting diodes, lasers, and detectors and hetero-substrates for GaN. Research is driven not only by the technological requirements of state-of-the-art applications but also by the la...
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| Άλλοι συγγραφείς: | , |
|---|---|
| Μορφή: | Livre numérique |
| Γλώσσα: | Anglais |
| Έκδοση: |
Dordrecht :
Springer Netherlands
[20..].
Cham : Springer Nature |
| Έκδοση: | 1st ed. 2005. |
| Σειρά: | NATO Science Series II: Mathematics, Physics and Chemistry, Mathematics, Physics and Chemistry
194 |
| Διαθέσιμο Online: | Accès sur la plateforme de l'éditeur Accès sur la plateforme Istex Accès Université d'Orléans Accès INSA CVL |
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Archives Springer e-books (Licence nationale) Archives Springer e-books (Licence nationale) |
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| Edition sous un autre format: | • Zinc oxide - a material for micro- and optoelectronic applications, edited by Norbert H. Nickel and Evgenii Terukov, Dordrecht, Springer, 2005, 1 vol. (XVI-240 p.), NATO science series, 1-402-03473-3 |
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| 245 | 0 | 0 | |a Zinc oxide : |b a material for micro- and optoelectronic applications |c edited by Norbert H. Nickel, Evgenii Terukov. |
| 250 | |a 1st ed. 2005. | ||
| 260 | |a Dordrecht : |b Springer Netherlands. | ||
| 260 | |a Cham : |b Springer Nature, |c [20..]. | ||
| 490 | 0 | |a NATO Science Series II: Mathematics, Physics and Chemistry, Mathematics, Physics and Chemistry |v 194 | |
| 500 | |a Archives Springer e-books (Licence nationale) | ||
| 500 | |a Archives Springer e-books (Licence nationale) | ||
| 505 | 1 | |a ZnO Bulk and Layer Growth The Scope of Zinc Oxide Bulk Growth Growth Mechanism of ZnO Layers Kinetics of High-Temperature Defect Formation in ZnO in the Stream of Oxygen Radicals Electrical, Optical, and Structural Properties Electrical Properties of ZnO Electrical Properties of ZnO Thin Films and Single Crystals Structure, Morphology, and Photoluminescence of ZnO Films Optics and Spectroscopy of Point Defects in ZnO Whispering Gallery Modes in Hexagonal Zinc Oxide Micro- and Nanocrystals Properties of Dislocations in Epitaxial ZnO Layers Analyzed by Transmission Electron Microscopy Role of Hydrogen Muon Spin Rotation Measurements on Zinc Oxide Hydrogen Donors in Zinc Oxide Hydrogen-Related Defects in ZnO Studied by IR Absorption Spectroscopy Influence of the Hydrogen Concentration on H Bonding in Zinc Oxide Fundamental Properties Valence Band Ordering and Magneto-Optical Properties of Free and Bound Excitons in ZnO Fundamental Optical Spectra and Electronic Structure of ZnO Crystals Photo-Induced Localized Lattice Vibrations in ZnO Doped with 3d Transition Metal Impurities Device Applications ZnO Window Layers for Solar Cells ZnO/AlGaN Ultraviolet Light Emitting Diodes ZnO Transparent Thin-Film Transistor Device Physics Zinc Oxide Thin-Film Transistors | |
| 506 | |a Accès en ligne pour les établissements français bénéficiaires des licences nationales | ||
| 506 | |a Accès soumis à abonnement pour tout autre établissement | ||
| 506 | |a Conditions particulières de réutilisation pour les bénéficiaires des licences nationales. https://www.licencesnationales.fr/springer-nature-ebooks-contrat-licence-ln-2017 | ||
| 520 | |a Recently, a significant effort has been devoted to the investigation of ZnO as a suitable semiconductor for UV light-emitting diodes, lasers, and detectors and hetero-substrates for GaN. Research is driven not only by the technological requirements of state-of-the-art applications but also by the lack of a fundamental understanding of growth processes, the role of intrinsic defects and dopants, and the properties of hydrogen. The NATO Advanced Research Workshop on Zinc oxide as a material for micro- and optoelectronic applications , held from June 23 to June 25 2004 in St. Petersburg, Russia, was organized accordingly and started with the growth of ZnO. A variety of growth methods for bulk and layer growth were discussed. These techniques comprised growth methods such as closed space vapor transport (CSVT), metal-organic chemical vapor deposition, reactive ion sputtering, and pulsed laser deposition. From a structural point of view using these growth techniques ZnO can be fabricated ranging from single crystalline bulk material to polycrystalline ZnO and nanowhiskers. A major aspect of the ZnO growth is doping. n-type doping is relatively easy to accomplish with elements such al Al or Ga. At room temperature single crystal ZnO exhibits a resistivity of about 0. 3 -cm, an electron mobility of 2 17 -3 225 cm /Vs, and a carrier concentration of 10 cm . In n-type ZnO two shallow donors are observable with activation energies of 30 40 meV and 60 70 meV | ||
| 700 | 1 | |a Nickel, Norbert H. |4 pbd | |
| 700 | 1 | |a Terukov, Evgenii. |4 pbd | |
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