Zinc oxide : a material for micro- and optoelectronic applications
Recently, a significant effort has been devoted to the investigation of ZnO as a suitable semiconductor for UV light-emitting diodes, lasers, and detectors and hetero-substrates for GaN. Research is driven not only by the technological requirements of state-of-the-art applications but also by the la...
Enregistré dans:
| Andre forfattere: | , |
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| Format: | Livre numérique |
| Sprog: | Anglais |
| Udgivet: |
Dordrecht :
Springer Netherlands
[20..].
Cham : Springer Nature |
| Udgivelse: | 1st ed. 2005. |
| Serier: | NATO Science Series II: Mathematics, Physics and Chemistry, Mathematics, Physics and Chemistry
194 |
| Online adgang: | Accès sur la plateforme de l'éditeur Accès sur la plateforme Istex Accès Université d'Orléans Accès INSA CVL |
| Kommentar: |
Archives Springer e-books (Licence nationale) Archives Springer e-books (Licence nationale) |
| Autres localisations: | Voir dans le Sudoc |
| Edition sous un autre format: | • Zinc oxide - a material for micro- and optoelectronic applications, edited by Norbert H. Nickel and Evgenii Terukov, Dordrecht, Springer, 2005, 1 vol. (XVI-240 p.), NATO science series, 1-402-03473-3 |
| Summary: | Recently, a significant effort has been devoted to the investigation of ZnO as a suitable semiconductor for UV light-emitting diodes, lasers, and detectors and hetero-substrates for GaN. Research is driven not only by the technological requirements of state-of-the-art applications but also by the lack of a fundamental understanding of growth processes, the role of intrinsic defects and dopants, and the properties of hydrogen. The NATO Advanced Research Workshop on Zinc oxide as a material for micro- and optoelectronic applications , held from June 23 to June 25 2004 in St. Petersburg, Russia, was organized accordingly and started with the growth of ZnO. A variety of growth methods for bulk and layer growth were discussed. These techniques comprised growth methods such as closed space vapor transport (CSVT), metal-organic chemical vapor deposition, reactive ion sputtering, and pulsed laser deposition. From a structural point of view using these growth techniques ZnO can be fabricated ranging from single crystalline bulk material to polycrystalline ZnO and nanowhiskers. A major aspect of the ZnO growth is doping. n-type doping is relatively easy to accomplish with elements such al Al or Ga. At room temperature single crystal ZnO exhibits a resistivity of about 0. 3 -cm, an electron mobility of 2 17 -3 225 cm /Vs, and a carrier concentration of 10 cm . In n-type ZnO two shallow donors are observable with activation energies of 30 40 meV and 60 70 meV |
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| Emne beskrivelse: | Archives Springer e-books (Licence nationale) Archives Springer e-books (Licence nationale) |
| ISBN: | 9781402034756 |
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