GaP Heteroepitaxy on Si(100) : Benchmarking Surface Signals when Growing GaP on Si in CVD Ambients
Epitaxial integration of III-V semiconductors on silicon substrates has been desired over decades for high application potential in microelectronics, photovoltaics, and beyond. The performance of optoelectronic devices is still severely impaired by critical defect mechanisms driven by the crucial po...
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| Главный автор: | |
|---|---|
| Формат: | Livre numérique |
| Язык: | Anglais |
| Опубликовано: |
Cham :
Springer International Publishing
2013.
Cham : Springer Nature |
| Серии: | Springer Theses, Recognizing Outstanding Ph.D. Research
|
| Online-ссылка: | Accès sur la plateforme de l'éditeur Accès sur la plateforme Istex Accès Université d'Orléans Accès INSA CVL |
| Примечание: |
Archives Springer e-books (Licence nationale) Archives Springer e-books (Licence nationale) |
| Autres localisations: | Voir dans le Sudoc |
| Edition sous un autre format: | • GaP Heteroepitaxy on Si(100), Texte imprimé, 9783319028798 • GaP Heteroepitaxy on Si(100), Texte imprimé, 9783319028811 • GaP Heteroepitaxy on Si(100), Texte imprimé, 9783319379555 |
Оглавление:
- Introduction
- Experimental
- Si(100) surfaces in chemical vapor environments
- GaP(100) and InP(100) surfaces
- GaP growth on Si(100) and anti-phase disorder
- Conclusion.