GaP Heteroepitaxy on Si(100) : Benchmarking Surface Signals when Growing GaP on Si in CVD Ambients
Epitaxial integration of III-V semiconductors on silicon substrates has been desired over decades for high application potential in microelectronics, photovoltaics, and beyond. The performance of optoelectronic devices is still severely impaired by critical defect mechanisms driven by the crucial po...
Kaydedildi:
| Yazar: | |
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| Materyal Türü: | Livre numérique |
| Dil: | Anglais |
| Baskı/Yayın Bilgisi: |
Cham :
Springer International Publishing
2013.
Cham : Springer Nature |
| Seri Bilgileri: | Springer Theses, Recognizing Outstanding Ph.D. Research
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| Online Erişim: | Accès sur la plateforme de l'éditeur Accès sur la plateforme Istex Accès Université d'Orléans Accès INSA CVL |
| Not: |
Archives Springer e-books (Licence nationale) Archives Springer e-books (Licence nationale) |
| Autres localisations: | Voir dans le Sudoc |
| Edition sous un autre format: | • GaP Heteroepitaxy on Si(100), Texte imprimé, 9783319028798 • GaP Heteroepitaxy on Si(100), Texte imprimé, 9783319028811 • GaP Heteroepitaxy on Si(100), Texte imprimé, 9783319379555 |