High mobility and quantum well transistors : design and TCAD simulation
For many decades, the semiconductor industry has miniaturized transistors, delivering increased computing power to consumers at decreased cost. However, mere transistor downsizing does no longer provide the same improvements. One interesting option to further improve transistor characteristics is to...
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| Auteurs principaux: | , |
|---|---|
| Formato: | Livre numérique |
| Idioma: | Anglais |
| Publicado em: |
Dordrecht :
Springer Netherlands
2013.
Cham : Springer Nature |
| Colecção: | Springer Series in Advanced Microelectronics
42 |
| Acesso em linha: | Accès sur la plateforme de l'éditeur Accès sur la plateforme Istex Accès Université d'Orléans Accès INSA CVL |
| Nota: |
Archives Springer e-books (Licence nationale) Archives Springer e-books (Licence nationale) |
| Autres localisations: | Voir dans le Sudoc |
| Edition sous un autre format: | • High mobility and quantum well transistors, design and TCAD simulation, Geert Hellings, Kristin De Meyer, Dordrecht, Springer, 2013, 1 vol. (XVIII-140 p.), Springer series in advanced microelectronics, 978-94-007-6339-5 • High Mobility and Quantum Well Transistors, Texte imprimé, 9789400763418 • High Mobility and Quantum Well Transistors, Texte imprimé, 9789400795693 |
Sumário:
- List of Abbreviations and Symbols
- 1 Introduction
- 2 S/D Junctions in Ge: experimental
- 3 TCAD Simulation and Modeling of Ion Implants in Germanium
- 4 Electrical TCAD Simulations and Modeling in Germanium
- 5 Investigation of Quantum Well Transistors for Scaled Technologies
- 6 Implant-Free Quantum Well FETs: Experimental investigation
- 7 Conclusions Future Work and Outlook
- Bibliography
- List of Publications.