High mobility and quantum well transistors : design and TCAD simulation
For many decades, the semiconductor industry has miniaturized transistors, delivering increased computing power to consumers at decreased cost. However, mere transistor downsizing does no longer provide the same improvements. One interesting option to further improve transistor characteristics is to...
Gespeichert in:
| Hauptverfasser: | , |
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| Format: | Livre numérique |
| Sprache: | Anglais |
| Veröffentlicht: |
Dordrecht :
Springer Netherlands
2013.
Cham : Springer Nature |
| Schriftenreihe: | Springer Series in Advanced Microelectronics
42 |
| Online Zugang: | Accès sur la plateforme de l'éditeur Accès sur la plateforme Istex Accès Université d'Orléans Accès INSA CVL |
| Anmerkung: |
Archives Springer e-books (Licence nationale) Archives Springer e-books (Licence nationale) |
| Autres localisations: | Voir dans le Sudoc |
| Edition sous un autre format: | • High mobility and quantum well transistors, design and TCAD simulation, Geert Hellings, Kristin De Meyer, Dordrecht, Springer, 2013, 1 vol. (XVIII-140 p.), Springer series in advanced microelectronics, 978-94-007-6339-5 • High Mobility and Quantum Well Transistors, Texte imprimé, 9789400763418 • High Mobility and Quantum Well Transistors, Texte imprimé, 9789400795693 |
| Zusammenfassung: | For many decades, the semiconductor industry has miniaturized transistors, delivering increased computing power to consumers at decreased cost. However, mere transistor downsizing does no longer provide the same improvements. One interesting option to further improve transistor characteristics is to use high mobility materials such as germanium and III-V materials. However, transistors have to be redesigned in order to fully benefit from these alternative materials. High Mobility and Quantum Well Transistors: Design and TCAD Simulation investigates planar bulk Germanium pFET technology in chapters 2-4, focusing on both the fabrication of such a technology and on the process and electrical TCAD simulation. Furthermore, this book shows that Quantum Well based transistors can leverage the benefits of these alternative materials, since they confine the charge carriers to the high-mobility material using a heterostructure. The design and fabrication of one particular transistor structure - the SiGe Implant-Free Quantum Well pFET is discussed. Electrical testing shows remarkable short-channel performance and prototypes are found to be competitive with a state-of-the-art planar strained-silicon technology. High mobility channels, providing high drive current, and heterostructure confinement, providing good short-channel control, make a promising combination for future technology nodes. |
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| Beschreibung: | Archives Springer e-books (Licence nationale) Archives Springer e-books (Licence nationale) |
| ISBN: | 9789400763401 |
| ISSN: | 2197-6643 |
| Zugangseinschränkungen: | Accès en ligne pour les établissements français bénéficiaires des licences nationales Accès soumis à abonnement pour tout autre établissement Conditions particulières de réutilisation pour les bénéficiaires des licences nationales. chttps://www.licencesnationales.fr/springer-nature-ebooks-contrat-licence-ln-2017 |