Fundamentals of Nanoscaled Field Effect Transistors
Fundamentals of Nanoscaled Field Effect Transistors gives comprehensive coverage of the fundamental physical principles and theory behind nanoscale transistors. The specific issues that arise for nanoscale MOSFETs, such as quantum mechanical tunneling and inversion layer quantization, are fully expl...
Salvato in:
| Autore principale: | |
|---|---|
| Natura: | Livre numérique |
| Lingua: | Anglais |
| Pubblicazione: |
New York, NY :
Springer New York
2013.
Cham : Springer Nature |
| Accesso online: | Accès sur la plateforme de l'éditeur Accès sur la plateforme Istex Accès Université d'Orléans Accès INSA CVL |
| Nota: |
Archives Springer e-books (Licence nationale) Archives Springer e-books (Licence nationale) |
| Autres localisations: | Voir dans le Sudoc |
| Edition sous un autre format: | • Fundamentals of Nanoscaled Field Effect Transistors, Texte imprimé, 9781461468219 • Fundamentals of Nanoscaled Field Effect Transistors, Texte imprimé, 9781461468233 • Fundamentals of Nanoscaled Field Effect Transistors, Texte imprimé, 9781493944828 |
Sommario:
- Scaling of a MOS Transistor
- Nanoscale Effects- Gate Oxide Leakage Currents
- Nanoscale Effects- Inversion Layer Quantization
- Dielectrics for Nanoelectronics
- Germanium Technology
- Biaxial s-Si Technology
- Uniaxial s-Si Technology
- Alternate MOS Structures
- Graphene Technology.