Fundamentals of Nanoscaled Field Effect Transistors

Fundamentals of Nanoscaled Field Effect Transistors gives comprehensive coverage of the fundamental physical principles and theory behind nanoscale transistors. The specific issues that arise for nanoscale MOSFETs, such as quantum mechanical tunneling and inversion layer quantization, are fully expl...

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Opis bibliograficzny
1. autor: Chaudhry, Amit
Format: Livre numérique
Język:Anglais
Wydane: New York, NY : Springer New York 2013.
Cham : Springer Nature
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Komentarz: Archives Springer e-books (Licence nationale)
Archives Springer e-books (Licence nationale)
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Edition sous un autre format:• Fundamentals of Nanoscaled Field Effect Transistors, Texte imprimé, 9781461468219
• Fundamentals of Nanoscaled Field Effect Transistors, Texte imprimé, 9781461468233
• Fundamentals of Nanoscaled Field Effect Transistors, Texte imprimé, 9781493944828
Opis
Streszczenie:Fundamentals of Nanoscaled Field Effect Transistors gives comprehensive coverage of the fundamental physical principles and theory behind nanoscale transistors. The specific issues that arise for nanoscale MOSFETs, such as quantum mechanical tunneling and inversion layer quantization, are fully explored. The solutions to these issues, such as high- technology, strained-Si technology, alternate devices structures and graphene technology are also given. Some case studies regarding the above issues and solution are also given in the book. In summary, this book: Covers the fundamental principles behind nanoelectronics/microelectronics Includes chapters devoted to solutions tackling the quantum mechanical effects occurring at nanoscale Provides some case studies to understand the issue mathematically Fundamentals of Nanoscaled Field Effect Transistors is an ideal book for researchers and undergraduate and graduate students in the field of microelectronics, nanoelectronics, and electronics.
Deskrypcja:Archives Springer e-books (Licence nationale)
Archives Springer e-books (Licence nationale)
ISBN:9781461468226
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