Fundamentals of III-V Semiconductor MOSFETs
Fundamentals of III-V Semiconductor MOSFETs presents the fundamentals and current status of research of compound semiconductor metal-oxide-semiconductor field-effect transistors (MOSFETs) that are envisioned as a future replacement of silicon in digital circuits. The material covered begins with a r...
Wedi'i Gadw mewn:
| Awduron Eraill: | , |
|---|---|
| Fformat: | Livre numérique |
| Iaith: | Anglais |
| Cyhoeddwyd: |
New York, NY :
Springer US : Imprint: Springer
[20..].
Cham : Springer Nature |
| Rhifyn: | 1. |
| Mynediad Ar-lein: | Accès sur la plateforme de l'éditeur Accès sur la plateforme Istex Accès Université d'Orléans Accès INSA CVL |
| Nodyn: |
Archives Springer e-books (Licence nationale) Archives Springer e-books (Licence nationale) |
| Autres localisations: | Voir dans le Sudoc |
| Edition sous un autre format: | • Fundamentals of III-V semiconductor MOSFETs, Serge Oktyabrsky, Peide Ye, editors, New York, Springer, 2010, 1 vol. (XV-445 p.), 978-1-441-91546-7 |
Tabl Cynhwysion:
- Non-Silicon MOSFET Technology: A Long Time Coming Properties and Trade-Offs of Compound Semiconductor MOSFETs Device Physics and Performance Potential of III-V Field-Effect Transistors Theory of HfO2-Based High-k Dielectric Gate Stacks Density Functional Theory Simulations of High-k Oxides on III-V Semiconductors Interfacial Chemistry of Oxides on III-V Compound Semiconductors Atomic-Layer Deposited High-k/III-V Metal-Oxide-Semiconductor Devices and Correlated Empirical Model Materials and Technologies for III-V MOSFETs InGaAs, Ge, and GaN Metal-Oxide-Semiconductor Devices with High-k Dielectrics for Science and Technology Beyond Si CMOS Sub-100 nm Gate III-V MOSFET for Digital Applications Electrical and Material Characteristics of Hafnium Oxide with Silicon Interface Passivation on III-V Substrate for Future Scaled CMOS Technology p-type Channel Field-Effect Transistors Insulated Gate Nitride-Based Field Effect Transistors Technology/Circuit Co-Design for III-V FETs