Device applications of silicon nanocrystals and nanostructures
Recent developments in the technology of silicon nanocrystals and silicon nanostructures, where quantum-size effects are important, are systematically described including examples of device applications. Due to the strong quantum confinement effect, the material properties are freed from the usual i...
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| מחברים אחרים: | |
| פורמט: | Livre numérique |
| שפה: | Anglais |
| יצא לאור: |
New York, NY :
Springer US
[20..].
Cham : Springer Nature |
| מהדורה: | 1st ed. 2009. |
| סדרה: | Nanostructure Science and Technology
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| גישה מקוונת: | Accès sur la plateforme de l'éditeur Accès sur la plateforme Istex Accès Université d'Orléans Accès INSA CVL |
| הערה: |
Archives Springer e-books (Licence nationale) Archives Springer e-books (Licence nationale) |
| Autres localisations: | Voir dans le Sudoc |
| Edition sous un autre format: | • Device Applications of Silicon Nanocrystals and Nanostructures, edited by Nobuyoshi Koshida, New York, Springer, 2009, 1 vol. (xii-344p.), Nanostructure Science and Technology, 978-0-387-78688-9 • Automating instructional design, development, and delivery, edited by Robert D. Tennyson, Berlin, Springer-Verlag, 1994, viii. 266 p., NATO ASI series, 0-387-57022-5 • Device Applications of Silicon Nanocrystals and Nanostructures, edited by Nobuyoshi Koshida, New York, Springer, 2009, 1 vol. (xii-344p.), Nanostructure Science and Technology, 978-0-387-78688-9 • Device Applications of Silicon Nanocrystals and Nanostructures, Texte imprimé, 9781489977373 • Automating instructional design, development, and delivery, edited by Robert D. Tennyson, Berlin, Springer-Verlag, 1994, viii. 266 p., NATO ASI series, 0-387-57022-5 • Device Applications of Silicon Nanocrystals and Nanostructures, edited by Nobuyoshi Koshida, New York, Springer, 2009, 1 vol. (xii-344p.), Nanostructure Science and Technology, 978-0-387-78688-9 • Device Applications of Silicon Nanocrystals and Nanostructures, Texte imprimé, 9781489977373 |
| סיכום: | Recent developments in the technology of silicon nanocrystals and silicon nanostructures, where quantum-size effects are important, are systematically described including examples of device applications. Due to the strong quantum confinement effect, the material properties are freed from the usual indirect- or direct-bandgap regime, and the optical, electrical, thermal, and chemical properties of these nanocrystalline and nanostructured semiconductors are drastically changed from those of bulk silicon. In addition to efficient visible luminescence, various other useful material functions are induced in nanocrystalline silicon and periodic silicon nanostructures. Some novel devices and applications, in fields such as photonics (electroluminescence diode, microcavity, and waveguide), electronics (single-electron device, spin transistor, nonvolatile memory, and ballistic electron emitter), acoustics, and biology, have been developed by the use of these quantum-induced functions in ways different from the conventional scaling principle for ULSI. Key Features: Offers the first comprehensive treatment of recent advances in quantum-sized silicon device technology Presents systematic and vivid descriptions from a technological viewpoint, providing a realistic perspective on forthcoming silicon device concepts in the post-scaling era Shows how silicon nanocrystal technology is fundamental to the future of silicon electronics, optoelectronics, and photonics Reviews optimal strategies for developing the next generation of devices for microelectronics, photonics, acoustics, and biology |
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| תאור פריט: | Archives Springer e-books (Licence nationale) Archives Springer e-books (Licence nationale) |
| ISBN: | 9780387786896 |
| ISSN: | 2197-7976 |
| גישה: | Accès en ligne pour les établissements français bénéficiaires des licences nationales Accès soumis à abonnement pour tout autre établissement Conditions particulières de réutilisation pour les bénéficiaires des licences nationales. https://www.licencesnationales.fr/springer-nature-ebooks-contrat-licence-ln-2017 |

