Charged semiconductor defects : structure, thermodynamics and diffusion
The technologically useful properties of a solid often depend upon the types and concentrations of the defects it contains. Not surprisingly, defects in semiconductors have been studied for many years, in many cases with a view towards controlling their behavior through various forms of "defect...
Gespeichert in:
| Hauptverfasser: | , |
|---|---|
| Format: | Livre numérique |
| Sprache: | Anglais |
| Veröffentlicht: |
London :
Springer London
[20..].
Cham : Springer Nature |
| Schriftenreihe: | Engineering Materials and Processes
|
| Online Zugang: | Accès sur la plateforme de l'éditeur Accès sur la plateforme Istex Accès Université d'Orléans Accès INSA CVL |
| Anmerkung: |
Archives Springer e-books (Licence nationale) Archives Springer e-books (Licence nationale) |
| Autres localisations: | Voir dans le Sudoc |
| Edition sous un autre format: | • Charged semiconductor defects, structure, thermodynamics and diffusion, Edmund G. Seebauer, Meredith C. Kratzer, [Londres], Springer, 2009, 1 vol. (XIV-294 p.), Engineering materials and processes, 978-1-84882-058-6 |
Inhaltsangabe:
- Fundamentals of Defect Ionization and Transport Experimental and Computational Characterization Trends in Charged Defect Behavior Intrinsic Defects: Structure Intrinsic Defects: Ionization Thermodynamics Intrinsic Defects: Diffusion Extrinsic Defects