Low-power high-speed ADCs for nanometer CMOS integration

Low-Power High-Speed ADCs for Nanometer CMOS Integration is about the design and implementation of ADC in nanometer CMOS processes that achieve lower power consumption for a given speed and resolution than previous designs, through architectural and circuit innovations that take advantage of unique...

وصف كامل

محفوظ في:
التفاصيل البيبلوغرافية
المؤلفون الرئيسيون: Cao, Zhiheng, Yan, Shouli (مؤلف)
التنسيق: Livre numérique
اللغة:Anglais
منشور في: Dordrecht : Springer Netherlands 2008.
Cham : Springer Nature
سلاسل:Analog Circuits and Signal Processing
الوصول للمادة أونلاين:Accès sur la plateforme de l'éditeur
Accès sur la plateforme Istex
Accès Université d'Orléans
Accès INSA CVL
ملاحظة: Archives Springer e-books (Licence nationale)
Archives Springer e-books (Licence nationale)
Autres localisations: Voir dans le Sudoc
Edition sous un autre format:• Low-Power High-Speed ADCs for Nanometer CMOS Integration, Texte imprimé, 9781402084492
• Low-Power High-Speed ADCs for Nanometer CMOS Integration, Texte imprimé, 9789048120031
• Low-Power High-Speed ADCs for Nanometer CMOS Integration, Texte imprimé, 9789048178858
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245 1 0 |a Low-power high-speed ADCs for nanometer CMOS integration   |c by Zhiheng Cao, Shouli Yan. 
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505 0 |a A 52 mW 10 b 210 MS/s Two-Step ADC for Digital IF Receivers in 130 nm CMOS -- A 32 mW 1.25 GS/s 6 b 2 b/Step SAR ADC in 130 nm Digital CMOS -- A 0.4 ps-RMS-Jitter 1 3 GHz Clock Multiplier PLL Using Phase-Noise Preamplification -- Conclusions and Future Directions. 
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520 |a Low-Power High-Speed ADCs for Nanometer CMOS Integration is about the design and implementation of ADC in nanometer CMOS processes that achieve lower power consumption for a given speed and resolution than previous designs, through architectural and circuit innovations that take advantage of unique features of nanometer CMOS processes. A phase lock loop (PLL) clock multiplier has also been designed using new circuit techniques and successfully tested. 1) A 1.2V, 52mW, 210MS/s 10-bit two-step ADC in 130nm CMOS occupying 0.38mm2. Using offset canceling comparators and capacitor networks implemented with small value interconnect capacitors to replace resistor ladder/multiplexer in conventional sub-ranging ADCs, it achieves 74dB SFDR for 10MHz and 71dB SFDR for 100MHz input. 2) A 32mW, 1.25GS/s 6-bit ADC with 2.5GHz internal clock in 130nm CMOS. A new type of architecture that combines flash and SAR enables the lowest power consumption, 6-bit >1GS/s ADC reported to date. This design can be a drop-in replacement for existing flash ADCs since it does require any post-processing or calibration step and has the same latency as flash. 3) A 0.4ps-rms-jitter (integrated from 3kHz to 300MHz offset for >2.5GHz) 1-3GHz tunable, phase-noise programmable clock-multiplier PLL for generating sampling clock to the SAR ADC. A new loop filter structure enables phase error preamplification to lower PLL in-band noise without increasing loop filter capacitor size. 
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