Advanced gate stacks for high-mobility semiconductors
Will nanoelectronic devices continue to scale according to Moore s law? At this moment, there is no easy answer since gate scaling is rapidly emerging as a serious roadblock for the evolution of CMOS technology. Channel engineering based on high-mobility semiconductor materials (e.g. strained Si, al...
Gardado en:
| Outros autores: | , , , |
|---|---|
| Formato: | Livre numérique |
| Idioma: | Anglais |
| Publicado: |
Berlin, Heidelberg :
Springer Berlin Heidelberg : Springer e-books
[20..].
Cham : Springer Nature |
| Series: | Advanced Microelectronics
27 |
| Acceso en liña: | Accès sur la plateforme de l'éditeur Accès sur la plateforme Istex Accès Université d'Orléans Accès INSA CVL |
| Nota: |
Archives Springer e-books (Licence nationale) Archives Springer e-books (Licence nationale) |
| Autres localisations: | Voir dans le Sudoc |
| Edition sous un autre format: | • Advanced Gate Stacks for High-Mobility Semiconductors, Texte imprimé, 9783540714903 |
Table des matières:
- Strained-Si CMOS Technology High Current Drivability MOSFET Fabricated on Si(110) Surface Advanced High-Mobility Semiconductor-on-Insulator Materials Passivation and Characterization of Germanium Surfaces Interface Engineering for High-? Ge MOSFETs Effect of Surface Nitridation on the Electrical Characteristics of Germanium High-?/Metal Gate Metal-Oxide-Semiconductor Devices Modeling of Growth of High-? Oxides on Semiconductors Physical, Chemical, and Electrical Characterization of High-? Dielectrics on Ge and GaAs Point Defects in Stacks of High-? Metal Oxides on Ge: Contrast with the Si Case High ? Gate Dielectrics for Compound Semiconductors Interface Properties of High-? Dielectrics on Germanium A Theoretical View on the Dielectric Properties of Crystalline and Amorphous High-? Materials and Films Germanium Nanodevices and Technology Opportunities and Challenges of Germanium Channel MOSFETs Germanium Deep-Submicron p-FET and n-FET Devices, Fabricated on Germanium-On-Insulator Substrates Processing and Characterization of III V Compound Semiconductor MOSFETs Using Atomic Layer Deposited Gate Dielectrics Fabrication of MBE High-? MOSFETs in a Standard CMOS Flow