Advanced gate stacks for high-mobility semiconductors
Will nanoelectronic devices continue to scale according to Moore s law? At this moment, there is no easy answer since gate scaling is rapidly emerging as a serious roadblock for the evolution of CMOS technology. Channel engineering based on high-mobility semiconductor materials (e.g. strained Si, al...
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| Altri autori: | , , , |
|---|---|
| Natura: | Livre numérique |
| Lingua: | Anglais |
| Pubblicazione: |
Berlin, Heidelberg :
Springer Berlin Heidelberg : Springer e-books
[20..].
Cham : Springer Nature |
| Serie: | Advanced Microelectronics
27 |
| Accesso online: | Accès sur la plateforme de l'éditeur Accès sur la plateforme Istex Accès Université d'Orléans Accès INSA CVL |
| Nota: |
Archives Springer e-books (Licence nationale) Archives Springer e-books (Licence nationale) |
| Autres localisations: | Voir dans le Sudoc |
| Edition sous un autre format: | • Advanced Gate Stacks for High-Mobility Semiconductors, Texte imprimé, 9783540714903 |