Advanced gate stacks for high-mobility semiconductors
Will nanoelectronic devices continue to scale according to Moore s law? At this moment, there is no easy answer since gate scaling is rapidly emerging as a serious roadblock for the evolution of CMOS technology. Channel engineering based on high-mobility semiconductor materials (e.g. strained Si, al...
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| Другие авторы: | , , , |
|---|---|
| Формат: | Livre numérique |
| Язык: | Anglais |
| Опубликовано: |
Berlin, Heidelberg :
Springer Berlin Heidelberg : Springer e-books
[20..].
Cham : Springer Nature |
| Серии: | Advanced Microelectronics
27 |
| Online-ссылка: | Accès sur la plateforme de l'éditeur Accès sur la plateforme Istex Accès Université d'Orléans Accès INSA CVL |
| Примечание: |
Archives Springer e-books (Licence nationale) Archives Springer e-books (Licence nationale) |
| Autres localisations: | Voir dans le Sudoc |
| Edition sous un autre format: | • Advanced Gate Stacks for High-Mobility Semiconductors, Texte imprimé, 9783540714903 |
| LEADER | 04291nam a22003497a 4500 | ||
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| 001 | 939864 | ||
| 008 | 080505q2000 xx ||| |||| 00| 0 eng d | ||
| 009 | PPN12373150X | ||
| 020 | |a 9783540714910 | ||
| 041 | 0 | |a eng | |
| 082 | |a 621.381 | ||
| 245 | 0 | 0 | |a Advanced gate stacks for high-mobility semiconductors |c edited by Athanasios Dimoulas, Evgeni Gusev, Paul C. McIntyre, Marc Heyns. |
| 260 | |a Berlin, Heidelberg : |b Springer Berlin Heidelberg : |b Springer e-books. | ||
| 260 | |a Cham : |b Springer Nature, |c [20..]. | ||
| 490 | 0 | |a Advanced Microelectronics |v 27 |x 1437-0387 | |
| 500 | |a Archives Springer e-books (Licence nationale) | ||
| 500 | |a Archives Springer e-books (Licence nationale) | ||
| 505 | 1 | |a Strained-Si CMOS Technology High Current Drivability MOSFET Fabricated on Si(110) Surface Advanced High-Mobility Semiconductor-on-Insulator Materials Passivation and Characterization of Germanium Surfaces Interface Engineering for High-? Ge MOSFETs Effect of Surface Nitridation on the Electrical Characteristics of Germanium High-?/Metal Gate Metal-Oxide-Semiconductor Devices Modeling of Growth of High-? Oxides on Semiconductors Physical, Chemical, and Electrical Characterization of High-? Dielectrics on Ge and GaAs Point Defects in Stacks of High-? Metal Oxides on Ge: Contrast with the Si Case High ? Gate Dielectrics for Compound Semiconductors Interface Properties of High-? Dielectrics on Germanium A Theoretical View on the Dielectric Properties of Crystalline and Amorphous High-? Materials and Films Germanium Nanodevices and Technology Opportunities and Challenges of Germanium Channel MOSFETs Germanium Deep-Submicron p-FET and n-FET Devices, Fabricated on Germanium-On-Insulator Substrates Processing and Characterization of III V Compound Semiconductor MOSFETs Using Atomic Layer Deposited Gate Dielectrics Fabrication of MBE High-? MOSFETs in a Standard CMOS Flow | |
| 506 | |a Accès en ligne pour les établissements français bénéficiaires des licences nationales | ||
| 506 | |a Accès soumis à abonnement pour tout autre établissement | ||
| 506 | |a Conditions particulières de réutilisation pour les bénéficiaires des licences nationales. https://www.licencesnationales.fr/springer-nature-ebooks-contrat-licence-ln-2017 | ||
| 520 | |a Will nanoelectronic devices continue to scale according to Moore s law? At this moment, there is no easy answer since gate scaling is rapidly emerging as a serious roadblock for the evolution of CMOS technology. Channel engineering based on high-mobility semiconductor materials (e.g. strained Si, alternative orientation substrates, Ge or III-V compounds) could help overcome the obstacles since they offer performance enhancement. There are several concerns though. Do we know how to make complex engineered substrates (e.g. Germanium-on-Insulator)? Which are the best interface passivation methodologies and (high-k) gate dielectrics on Ge and III-V compounds? Can we process these materials in short channel transistors using flows, toolsets and know how similar to that in Si technology? How do these materials and devices behave at the nanoscale? The reader will get a clear view of what has been done so far, what is the state-of-the-art and which are the main challenges ahead before we come any close to a viable Ge and III-V MOS technology | ||
| 700 | 1 | |a Dimoulas, Athanasios, |d 19..-...., |c chercheur en sciences des matériaux. |4 pbd | |
| 700 | 1 | |a Gusev, Evgeni P. |4 pbd | |
| 700 | 1 | |a Heyns, Marc, |d 19..- |4 pbd | |
| 700 | 1 | |a McIntyre, Paul C., |d 19..- |4 pbd | |
| 776 | 0 | |t Advanced Gate Stacks for High-Mobility Semiconductors |b Texte imprimé |z 9783540714903 | |
| 856 | 4 | |q PDF |u https://doi.org/10.1007/978-3-540-71491-0 |z Accès sur la plateforme de l'éditeur | |
| 856 | 4 | |u https://revue-sommaire.istex.fr/ark:/67375/8Q1-RF8G9M9D-5 |z Accès sur la plateforme Istex | |
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| 997 | |0 939864 |1 Livre numérique |a Ressource numérique |b INSA |b ENSA |c 0/Bibliothèque numérique/ |c 1/Bibliothèque numérique/Autre ressource numérique/ | ||