Defects in high-k gate dielectric stacks : nano-electronic semiconductor devices : [proceedings of the NATO Advanced Research Workshop on defects in advanced high-k dielectric nano-electronic semiconductor devices, St. Petersburg, Russia, July 11-14, 2005]

The goal of this NATO Advanced Research Workshop (ARW) entitled Defects in Advanced High-k Dielectric Nano-electronic Semiconductor Devices , which was held in St. Petersburg, Russia, from July 11 to 14, 2005, was to examine the very complex scientific issues that pertain to the use of advanced high...

Descrición completa

Gardado en:
Detalles Bibliográficos
Autor Corporativo: NATO Advanced Research Workshop on defects in advanced high-k dielectric nano-electric semiconductor devices (Auteur)
Outros autores: Gusev, Evgeni (Directeur de la publication)
Formato: Livre numérique
Idioma:Anglais
Publicado: Dordrecht : Springer Netherlands [20..].
Cham : Springer Nature
Edición:1st ed. 2006.
Series:NATO science series. Series II, Mathematics, physics and chemistry vol. 216
Sujets:
Acceso en liña:Accès sur la plateforme de l'éditeur
Accès sur la plateforme Istex
Accès Université d'Orléans
Accès INSA CVL
Nota: Archives Springer e-books (Licence nationale)
Archives Springer e-books (Licence nationale)
Autres localisations: Voir dans le Sudoc
Variante du titre:Proceedings of the NATO Advanced Research Workshop on Defects in Advanced High-K Dielectric Nano-Electronic Semiconductor Devices, St. Petersburg, Russia, from 11 to 14 July 2005
Edition sous un autre format:• Defects in high-k gate dielectric stacks, nano-electronic semiconductor devices, edited by Evgeni Gusev, Dordrecht, Springer, 2006, 1 vol. (x, 492 p.), NATO science series, 1-4020-4365-1

Títulos similares