Matching Properties of Deep Sub-Micron MOS Transistors
Matching Properties of Deep Sub-Micron MOS Transistors examines this interesting phenomenon. Microscopic fluctuations cause stochastic parameter fluctuations that affect the accuracy of the MOSFET. For analog circuits this determines the trade-off between speed, power, accuracy and yield. Furthermor...
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| Altres autors: | , |
| Format: | Livre numérique |
| Idioma: | Anglais |
| Publicat: |
New York, NY :
Springer US
2005.
Cham : Springer Nature |
| Edició: | 1st ed. 2005. |
| Col·lecció: | The Springer International Series in Engineering and Computer Science
851 |
| Accés en línia: | Accès sur la plateforme de l'éditeur Accès sur la plateforme Istex Accès Université d'Orléans Accès INSA CVL |
| Nota: |
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| Autres localisations: | Voir dans le Sudoc |
| Edition sous un autre format: | • Matching properties of deep sub-micron MOS transistors, by Jeroen A. Croon,... Willy Sansen,... and Herman E. Maes,..., Dordrecht, Springer, 2005, 1 volume (X-206 p., The Kluwer international series in engineering and computer science, 0-387-24314-3 • Matching Properties of Deep Sub-Micron MOS Transistors, Texte imprimé, 9781441937186 • New institutional arrangements for the world economy, Hans-Jürgen Vosgerau (ed.), Berlin, Springer-Verlag, 1989, 1 vol. (IX-482 p.), Studies in international economics and institutions, 0-387-50480-X • Matching properties of deep sub-micron MOS transistors, by Jeroen A. Croon,... Willy Sansen,... and Herman E. Maes,..., Dordrecht, Springer, 2005, 1 volume (X-206 p., The Kluwer international series in engineering and computer science, 0-387-24314-3 • Matching Properties of Deep Sub-Micron MOS Transistors, Texte imprimé, 9781441937186 • New institutional arrangements for the world economy, Hans-Jürgen Vosgerau (ed.), Berlin, Springer-Verlag, 1989, 1 vol. (IX-482 p.), Studies in international economics and institutions, 0-387-50480-X • Matching properties of deep sub-micron MOS transistors, by Jeroen A. Croon,... Willy Sansen,... and Herman E. Maes,..., Dordrecht, Springer, 2005, 1 volume (X-206 p., The Kluwer international series in engineering and computer science, 0-387-24314-3 |
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- Introduction: Matching analysis. Importance for circuit design. State of the art. Research objectives. Outline of this book Measurement and Modeling of Mismatch. Measurement setup. Experimental setup. Modeling of mismatch in the drain current. Width and length dependence. Example: Yield of a current-steering D/A converter. Conclusions Parameter Extraction. Extraction methods. Experimental setup. Comparison of extraction methods. Future issues. Conclusions Physical Origins of Mosfet Mismatch. Basic operation of the MOS transistor. Mismatch in the drain current. Physical origins of fluctuations. Conclusions Technological Aspects. Technology descriptions. Impact of the gate. Impact of the halo implantation. Comparison of di®erent CMOS technologies. Alternative device concepts. Conclusions Impact of Line-Edge Roughness. Characterization of line-edge roughness. Modeling the impact of line-width roughness. Experimental investigation of the impact of LWR. Prediction of the impact of LWR and guidelines. Conclusions Conclusions, Future Work and Outlook. Conclusions. Future work Outlook