Metal-Dielectric Interfaces in Gigascale Electronics : Thermal and Electrical Stability
Metal-dielectric interfaces are ubiquitous in modern electronics. As advanced gigascale electronic devices continue to shrink, the stability of these interfaces is becoming an increasingly important issue that has a profound impact on the operational reliability of these devices. In this book, the a...
Gorde:
| Egile Nagusiak: | , |
|---|---|
| Formatua: | Livre numérique |
| Hizkuntza: | Anglais |
| Argitaratua: |
New York, NY :
Springer New York
2012.
Cham : Springer Nature |
| Saila: | Springer Series in Materials Science
157 |
| Sarrera elektronikoa: | Accès sur la plateforme de l'éditeur Accès sur la plateforme Istex Accès Université d'Orléans Accès INSA CVL |
| Oharra: |
Archives Springer e-books (Licence nationale) Archives Springer e-books (Licence nationale) |
| Autres localisations: | Voir dans le Sudoc |
| Edition sous un autre format: | • Metal-Dielectric Interfaces in Gigascale Electronics, Texte imprimé, 9781461418139 • Metal-Dielectric Interfaces in Gigascale Electronics, Texte imprimé, 9781493943081 • Metal-Dielectric Interfaces in Gigascale Electronics, Texte imprimé, 9781461418115 |
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| 009 | PPN15750770X | ||
| 020 | |a 9781461418122 | ||
| 020 | |a 9781461418122 | ||
| 041 | 0 | |a eng | |
| 082 | |a 621.381 | ||
| 100 | 1 | |a He, Ming, |d 19..- | |
| 245 | 1 | 0 | |a Metal-Dielectric Interfaces in Gigascale Electronics : |b Thermal and Electrical Stability |c by Ming He, Toh-Ming Lu. |
| 260 | |a New York, NY : |b Springer New York. | ||
| 260 | |a Cham : |b Springer Nature, |c 2012. | ||
| 490 | 0 | |a Springer Series in Materials Science |v 157 |x 2196-2812 | |
| 500 | |a Archives Springer e-books (Licence nationale) | ||
| 500 | |a Archives Springer e-books (Licence nationale) | ||
| 505 | 0 | |a Preface -- 1. Introduction -- 2. Metal-Dielectric Diffusion Processes: Fundamentals -- 3. Experimental Techniques -- 4. Al-Dielectric Interfaces -- 5. Cu-Dielectric Interfaces -- 6. Barrier Metal-Dielectric Interfaces -- 7. Self-Forming Barriers. 8. Kinetics of Ion Drift -- 9. Time-Dependent Dielectric Breakdown (TDDB) and Future Directions. | |
| 506 | |a Accès en ligne pour les établissements français bénéficiaires des licences nationales | ||
| 506 | |a Accès soumis à abonnement pour tout autre établissement | ||
| 506 | |a Conditions particulières de réutilisation pour les bénéficiaires des licences nationales. chttps://www.licencesnationales.fr/springer-nature-ebooks-contrat-licence-ln-2017 | ||
| 520 | |a Metal-dielectric interfaces are ubiquitous in modern electronics. As advanced gigascale electronic devices continue to shrink, the stability of these interfaces is becoming an increasingly important issue that has a profound impact on the operational reliability of these devices. In this book, the authors present the basic science underlying the thermal and electrical stability of metal-dielectric interfaces and its relationship to the operation of advanced interconnect systems in gigascale electronics. Interface phenomena, including chemical reactions between metals and dielectrics, metallic-atom diffusion, and ion drift, are discussed based on fundamental physical and chemical principles. Schematic diagrams are provided throughout the book to illustrate interface phenomena and the principles that govern them. Metal-Dielectric Interfaces in Gigascale Electronics provides a unifying approach to the diverse and sometimes contradictory test results that are reported in the literature on metal-dielectric interfaces. The goal is to provide readers with a clear account of the relationship between interface science and its applications in interconnect structures. The material presented here will also be of interest to those engaged in field-effect transistor and memristor device research, as well as university researchers and industrial scientists working in the areas of electronic materials processing, semiconductor manufacturing, memory chips, and IC design. Presents a unified approach to understanding the diverse phenomena observed at metal-dielectric interfaces Features fundamental considerations in the physics and chemistry of metal-dielectric interactions Explores mechanisms of metal atom diffusion and metal ion drift in dielectrics Provides keys to understanding reliability in gigascale electronics Focuses on a dynamic area of current research that is a foundation of futureinterconnect systems, memristors, and solid-state electrolyte devices Presents a unified approach to understanding the diverse phenomena observed at metal-dielectric interfaces. | ||
| 700 | 1 | |a Lu, Toh-Ming. |4 aut | |
| 776 | 0 | |t Metal-Dielectric Interfaces in Gigascale Electronics |b Texte imprimé |z 9781461418139 | |
| 776 | 0 | |t Metal-Dielectric Interfaces in Gigascale Electronics |b Texte imprimé |z 9781493943081 | |
| 776 | 0 | |t Metal-Dielectric Interfaces in Gigascale Electronics |b Texte imprimé |z 9781461418115 | |
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| 997 | |0 973769 |1 Livre numérique |a Ressource numérique |b INSA |b ENSA |c 0/Bibliothèque numérique/ |c 1/Bibliothèque numérique/Autre ressource numérique/ | ||