Physics of narrow gap semiconductors : proceedings of the 4th International conference on physics of narrow gap semiconductors, held at Linz, Austria, September 14-17, 1981
Na minha lista:
| Autor principal: | |
|---|---|
| Outros Autores: | , |
| Formato: | Livre numérique |
| Idioma: | Anglais |
| Publicado em: |
Berlin [etc.] :
Springer
[20..].
Cham : Springer Nature |
| Colecção: | Lecture notes in physics
152 |
| Assuntos: | |
| Acesso em linha: | Accès sur la plateforme de l'éditeur Accès sur la plateforme Istex Accès Université d'Orléans Accès INSA CVL |
| Nota: |
Actes d'une conférence tenue à Linz du 14 au 17 septembre 1981, d'après l écran-titre Archives Springer e-books (Licence nationale) Archives Springer e-books (Licence nationale) |
| Autres localisations: | Voir dans le Sudoc |
| Edition sous un autre format: | • Physics of narrow gap semiconductors, proceedings of the 4th International conference on physics of narrow gap semiconductors, held at Linz, Austria, September 14-17, 1981, ed. by E. Gornik, H. Heinrich, and L. Palmetshofer, Berlin, Springer, 1982, 1 vol. (XI-485 p.), Lecture notes in physics, 3-540-11191-3 • Physics of Narrow Gap Semiconductors, Texte imprimé, 9783662190975 |
Sumário:
- Narrow gap semiconductors the state op the art
- Growth of some important narrow gap semiconductors
- Electrical transport and magnetic properties of MAs3 (M = Ca,Sr,Eu,Ba), ?- and ?-EuP3 and their alloys
- Tm1?xEuxSe: New narrow gap magnetic semiconductors
- Electronic properties of KxRb1?xAu , an indirect small gap semiconductor
- Growth of Sb2Te3 single crystals by hot-wall-epitaxy
- THM growth of PbTe
- Misfit strain in epitaxial IV VI semiconductor films
- Structure defects in Pb 1-xSnxTe solid solution heterocompositions
- Influence of impurity doping on the electrical properties of LPE grown Pb1?xSnxTe and PbSeyTe1?y
- Plasma reflection spectrum of the Pb 1?xSnxTe inhomogeneous layers and vapour transport process of Pb 1?xSnxTe
- Molecular beam epitaxy of CdTe and CdxHg1?xTe
- The investigation of the second phase in Hg1?xCdxTe crystals
- Structural and electrical properties of as grown CdxHg1?xTe epitaxial layers deposited by cathodic sputtering
- Interfacial energy bands for narrow-gap semiconductors
- 2D-subbands in III V and narrow-gap semiconductors
- Giant nonlinearities, optical bistability and the optical transistor in narrow-gap semiconductors
- Pulse width dependent nonlinear absorption in small gap semiconductors
- Photo-hall measurements of high-density photoexcited electrons in Hg1?x CdxTe
- The photoluminescence study of CdxHg1?xTe alloys
- Plasmon-assisted recombination in narrow-gap semiconductors in a magnetic field
- Calculation of the Auger lifetime in degenerate n-type (Hg,Cd)Te
- Excess carrier lifetime in Hg1?xCdxTe by population modulation spectroscopy
- Laser threshold and recombination in Pb1?xSnxTe AND PbS1?xSex
- Optical studies of a high density electron-hole plasma iN PbTe
- Far infrared opticalproperties of Cd3P2 AND Cd3As2
- A new broadband near-millimeter wave detector using mercury-cadmium-telluride
- Non-linear magneto-optics in InSb pumped by A c.w. CO LASER
- Far-infrared studies of the bound and free carriers in n-InSb as a function of hydrostatic pressure
- High resolution magneto-optical studies of free and bound hole excitations in InSb
- Two-photon spectroscopy in InSb with cw CO2 Lasers
- Uniaxial-stress-enhanced electron spin resonance in InSb
- Optical four-wave mixing in pbte epitaxial layers
- Spin-flip resonances in cadmium arsenide
- Peculiarities of the band structure of HgSe and mixed crystals Hg1?xCdxSe from the interband magnet absorption
- Bandstructure of Pb1?xGexTe in the C3v Phase
- Band structure of cubic and rhombohedral GeTe
- Dielectric properties of (Pb,Sn,Ge)Te-influences of defects
- Phase transitions and optical properties of IV VI compounds
- Lattice dynamics and phase transitions in IV VI compounds
- Pseudopotential approach to total energy calculations in narrow GAP semiconductors
- Lattice dynamics and phase transitions in IV VI semiconducting compounds
- Composition and carrier concentration dependence of structural instabilities in PbTe-SnTe alloys
- Phonon and electrical resistivity anomalies at the displacive phase transition in Pb 1?XSnXTe and Pb 1?XGeXTe
- Coupled phase transitions in Pb1?xGexTe
- A neutron scattering study of lattice dynamics of HgTe and HgSe
- New aspects of the material and device technology of intrinsic infrared photodetectors
- HgCdTe liquid phase epitaxial growth technology
- Lattice-matched PbSnTe/PbTeSe heterostructure device technology
- Lead chalcogenide diode lasers: State of the art and applications
- Magnetic properties of semimagnetic semiconductors
- Magnetizationof narrow gap semimagnetic semiconductors Hg1?xMnxTe AND Hg1?xMnxSe
- Microwave and far infrared magnetotransmission studies in Hg1?xMnxSe
- Acceptor states in semimagnetic semiconductors in a magnetic field
- Magneto-optical studies of quaternary semimagnetic semiconductor alloys Hg1?x?yCdxMnyTe
- Infrared magnetoabsorption in zero gap Hg1?xFexTe and Hg1?xFexSe mixed crystals
- The quantum transport and the magnetic levels in Pb1?xMnxTe
- Shubnikov-de Haas effects in (Cd1?xMnx)3As2 alloys
- Theory of magnetic susceptibility of narrow gap semiconductors
- Advances in synthesized superlattices
- Electronic properties of graphite intercalation compounds
- Comparison of transport properties in various semimetals systems
- Optical properties of PbTe-Pb1?xSnxTe superlattices prepared by a hot wall technique
- Screening of impurities in strong magnetic fields and its influence on the transverse conductivity
- Anomalous behaviour of the magnetoresistance of Hg1?xCdxTe in the extreme quantum limit
- Stationary and time-resolved magnetotransport in n-TYPE Hg0.8Cd0.2Te and n-type InSb in the extreme magnetic quantum limit
- Modification of the classical magnetic freeze-out manifestations in n-type Hg1?xCdxTe(x > 18%) due to the presence of resonant levels
- Ionized-defect-scattering mobility in n-PbTe
- High pressure electron mobility in low electron concentration InSb samples at 77K
- Shubnikov de Haas oscillations in Cd3?xZnxAs2 alloys
- Bi2Se3 and Bi2Te3 single crystals doped with Sn atoms
- Ultrasonic anomaly near zero-gap state in CdxHgl1?xSe
- Size effects in thin semimetal wires
- Pressure spectroscopy of localized levels
- First order phase transition of Hall coefficient versus magnetic field, under hydrostatic pressure due to freeze-out onacceptor state in Hg0.836Cd0.164Te
- Nonradiative recombination at deep impurity levels in p-type Hg1 xCdxTe
- On the thermodynamic instability of n-type HgCdTe, and on acceptor levels, transport properties, and liftime of p-type HgCdTe
- Ion-implantation-induced defect levels in Pb1?xSnxTe
- Photoluminescence CF Pb1?xSnxTe (x ? 0.2) crystals doped with Cd and In
- Energy levels of native defects in n-Pb1-xSnxSe
- Localized deep defect states in PbSexTe1?x mixed crystals
- Strong coupling between the resonant state and the crystal lattice in n-InSb
- Binding energies of charged impurity centres in narrow gap materials with large lattice polarizability
- The widening application of narrow-gap semiconductors closing address at the 4th international conference on the physics of narrow-gap semiconductors.