Physics of narrow gap semiconductors : proceedings of the 4th International conference on physics of narrow gap semiconductors, held at Linz, Austria, September 14-17, 1981
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| Drugi avtorji: | , |
| Format: | Livre numérique |
| Jezik: | Anglais |
| Izdano: |
Berlin [etc.] :
Springer
[20..].
Cham : Springer Nature |
| Serija: | Lecture notes in physics
152 |
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| Online dostop: | Accès sur la plateforme de l'éditeur Accès sur la plateforme Istex Accès Université d'Orléans Accès INSA CVL |
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Actes d'une conférence tenue à Linz du 14 au 17 septembre 1981, d'après l écran-titre Archives Springer e-books (Licence nationale) Archives Springer e-books (Licence nationale) |
| Autres localisations: | Voir dans le Sudoc |
| Edition sous un autre format: | • Physics of narrow gap semiconductors, proceedings of the 4th International conference on physics of narrow gap semiconductors, held at Linz, Austria, September 14-17, 1981, ed. by E. Gornik, H. Heinrich, and L. Palmetshofer, Berlin, Springer, 1982, 1 vol. (XI-485 p.), Lecture notes in physics, 3-540-11191-3 • Physics of Narrow Gap Semiconductors, Texte imprimé, 9783662190975 |
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| 041 | 0 | |a eng | |
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| 100 | 1 | |a Gornik, Erich. | |
| 245 | 1 | 0 | |a Physics of narrow gap semiconductors : |b proceedings of the 4th International conference on physics of narrow gap semiconductors, held at Linz, Austria, September 14-17, 1981 |c edited by E. Gornik, H. Heinrich and L. Palmetshofer. |
| 260 | |a Berlin [etc.] : |b Springer. | ||
| 260 | |a Cham : |b Springer Nature, |c [20..]. | ||
| 490 | 0 | |a Lecture notes in physics |v 152 |x 1616-6361 | |
| 500 | |a Actes d'une conférence tenue à Linz du 14 au 17 septembre 1981, d'après l écran-titre | ||
| 500 | |a Archives Springer e-books (Licence nationale) | ||
| 500 | |a Archives Springer e-books (Licence nationale) | ||
| 505 | 0 | |a Narrow gap semiconductors the state op the art -- Growth of some important narrow gap semiconductors -- Electrical transport and magnetic properties of MAs3 (M = Ca,Sr,Eu,Ba), ?- and ?-EuP3 and their alloys -- Tm1?xEuxSe: New narrow gap magnetic semiconductors -- Electronic properties of KxRb1?xAu , an indirect small gap semiconductor -- Growth of Sb2Te3 single crystals by hot-wall-epitaxy -- THM growth of PbTe -- Misfit strain in epitaxial IV VI semiconductor films -- Structure defects in Pb 1-xSnxTe solid solution heterocompositions -- Influence of impurity doping on the electrical properties of LPE grown Pb1?xSnxTe and PbSeyTe1?y -- Plasma reflection spectrum of the Pb 1?xSnxTe inhomogeneous layers and vapour transport process of Pb 1?xSnxTe -- Molecular beam epitaxy of CdTe and CdxHg1?xTe -- The investigation of the second phase in Hg1?xCdxTe crystals -- Structural and electrical properties of as grown CdxHg1?xTe epitaxial layers deposited by cathodic sputtering -- Interfacial energy bands for narrow-gap semiconductors -- 2D-subbands in III V and narrow-gap semiconductors -- Giant nonlinearities, optical bistability and the optical transistor in narrow-gap semiconductors -- Pulse width dependent nonlinear absorption in small gap semiconductors -- Photo-hall measurements of high-density photoexcited electrons in Hg1?x CdxTe -- The photoluminescence study of CdxHg1?xTe alloys -- Plasmon-assisted recombination in narrow-gap semiconductors in a magnetic field -- Calculation of the Auger lifetime in degenerate n-type (Hg,Cd)Te -- Excess carrier lifetime in Hg1?xCdxTe by population modulation spectroscopy -- Laser threshold and recombination in Pb1?xSnxTe AND PbS1?xSex -- Optical studies of a high density electron-hole plasma iN PbTe -- Far infrared opticalproperties of Cd3P2 AND Cd3As2 -- A new broadband near-millimeter wave detector using mercury-cadmium-telluride -- Non-linear magneto-optics in InSb pumped by A c.w. CO LASER -- Far-infrared studies of the bound and free carriers in n-InSb as a function of hydrostatic pressure -- High resolution magneto-optical studies of free and bound hole excitations in InSb -- Two-photon spectroscopy in InSb with cw CO2 Lasers -- Uniaxial-stress-enhanced electron spin resonance in InSb -- Optical four-wave mixing in pbte epitaxial layers -- Spin-flip resonances in cadmium arsenide -- Peculiarities of the band structure of HgSe and mixed crystals Hg1?xCdxSe from the interband magnet absorption -- Bandstructure of Pb1?xGexTe in the C3v Phase -- Band structure of cubic and rhombohedral GeTe -- Dielectric properties of (Pb,Sn,Ge)Te-influences of defects -- Phase transitions and optical properties of IV VI compounds -- Lattice dynamics and phase transitions in IV VI compounds -- Pseudopotential approach to total energy calculations in narrow GAP semiconductors -- Lattice dynamics and phase transitions in IV VI semiconducting compounds -- Composition and carrier concentration dependence of structural instabilities in PbTe-SnTe alloys -- Phonon and electrical resistivity anomalies at the displacive phase transition in Pb 1?XSnXTe and Pb 1?XGeXTe -- Coupled phase transitions in Pb1?xGexTe -- A neutron scattering study of lattice dynamics of HgTe and HgSe -- New aspects of the material and device technology of intrinsic infrared photodetectors -- HgCdTe liquid phase epitaxial growth technology -- Lattice-matched PbSnTe/PbTeSe heterostructure device technology -- Lead chalcogenide diode lasers: State of the art and applications -- Magnetic properties of semimagnetic semiconductors -- Magnetizationof narrow gap semimagnetic semiconductors Hg1?xMnxTe AND Hg1?xMnxSe -- Microwave and far infrared magnetotransmission studies in Hg1?xMnxSe -- Acceptor states in semimagnetic semiconductors in a magnetic field -- Magneto-optical studies of quaternary semimagnetic semiconductor alloys Hg1?x?yCdxMnyTe -- Infrared magnetoabsorption in zero gap Hg1?xFexTe and Hg1?xFexSe mixed crystals -- The quantum transport and the magnetic levels in Pb1?xMnxTe -- Shubnikov-de Haas effects in (Cd1?xMnx)3As2 alloys -- Theory of magnetic susceptibility of narrow gap semiconductors -- Advances in synthesized superlattices -- Electronic properties of graphite intercalation compounds -- Comparison of transport properties in various semimetals systems -- Optical properties of PbTe-Pb1?xSnxTe superlattices prepared by a hot wall technique -- Screening of impurities in strong magnetic fields and its influence on the transverse conductivity -- Anomalous behaviour of the magnetoresistance of Hg1?xCdxTe in the extreme quantum limit -- Stationary and time-resolved magnetotransport in n-TYPE Hg0.8Cd0.2Te and n-type InSb in the extreme magnetic quantum limit -- Modification of the classical magnetic freeze-out manifestations in n-type Hg1?xCdxTe(x > 18%) due to the presence of resonant levels -- Ionized-defect-scattering mobility in n-PbTe -- High pressure electron mobility in low electron concentration InSb samples at 77K -- Shubnikov de Haas oscillations in Cd3?xZnxAs2 alloys -- Bi2Se3 and Bi2Te3 single crystals doped with Sn atoms -- Ultrasonic anomaly near zero-gap state in CdxHgl1?xSe -- Size effects in thin semimetal wires -- Pressure spectroscopy of localized levels -- First order phase transition of Hall coefficient versus magnetic field, under hydrostatic pressure due to freeze-out onacceptor state in Hg0.836Cd0.164Te -- Nonradiative recombination at deep impurity levels in p-type Hg1 xCdxTe -- On the thermodynamic instability of n-type HgCdTe, and on acceptor levels, transport properties, and liftime of p-type HgCdTe -- Ion-implantation-induced defect levels in Pb1?xSnxTe -- Photoluminescence CF Pb1?xSnxTe (x ? 0.2) crystals doped with Cd and In -- Energy levels of native defects in n-Pb1-xSnxSe -- Localized deep defect states in PbSexTe1?x mixed crystals -- Strong coupling between the resonant state and the crystal lattice in n-InSb -- Binding energies of charged impurity centres in narrow gap materials with large lattice polarizability -- The widening application of narrow-gap semiconductors closing address at the 4th international conference on the physics of narrow-gap semiconductors. | |
| 506 | |a Accès en ligne pour les établissements français bénéficiaires des licences nationales | ||
| 506 | |a Accès soumis à abonnement pour tout autre établissement | ||
| 506 | |a Conditions particulières de réutilisation pour les bénéficiaires des licences nationales. https://www.licencesnationales.fr/springer-nature-ebooks-contrat-licence-ln-2017 | ||
| 650 | |a Semiconducteurs à large bande interdite | ||
| 650 | |a Matière condensée | ||
| 650 | |a Physique | ||
| 650 | |a Actes de congrès | ||
| 700 | 1 | |a Heinrich, Helmut, |d 1938- |4 pbd | |
| 700 | 1 | |a Palmetshofer, Leopold. |4 pbd | |
| 776 | 0 | |0 004880099 |t Physics of narrow gap semiconductors |o proceedings of the 4th International conference on physics of narrow gap semiconductors, held at Linz, Austria, September 14-17, 1981 |f ed. by E. Gornik, H. Heinrich, and L. Palmetshofer |c Berlin |n Springer |d 1982 |p 1 vol. (XI-485 p.) |s Lecture notes in physics |z 3-540-11191-3 | |
| 776 | 0 | |t Physics of Narrow Gap Semiconductors |b Texte imprimé |z 9783662190975 | |
| 856 | 4 | |q PDF |u https://doi.org/10.1007/3-540-11191-3 |z Accès sur la plateforme de l'éditeur | |
| 856 | 4 | |u https://revue-sommaire.istex.fr/ark:/67375/8Q1-T46BW6RN-F |z Accès sur la plateforme Istex | |
| 856 | 4 | |5 452349901:750627859 |u https://ezproxy.univ-orleans.fr/login?url=https://doi.org/10.1007/3-540-11191-3 |z Accès Université d'Orléans | |
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| 997 | |0 973263 |1 Livre numérique |a Ressource numérique |b INSA |b ENSA |c 0/Bibliothèque numérique/ |c 1/Bibliothèque numérique/Autre ressource numérique/ | ||