Nanoscale spectroscopy and its applications to semiconductor research
Fabrication technologies for nanostructured devices have be- en developed recently, and the electrical and optical pro- perties of such nanostructures are a subject of advanced re- search. This book describes the different approaches to spectroscopic microscopy, i.e., electron beam probe spec- trosc...
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| Auteur principal: | |
|---|---|
| Autres auteurs: | , , |
| Format: | Livre numérique |
| Langue: | Anglais |
| Publié: |
Berlin [etc.] :
Springer
[20..].
Cham : Springer Nature |
| Collection: | Lecture notes in physics
588 |
| Sujets: | |
| Accès en ligne: | Accès sur la plateforme de l'éditeur Accès sur la plateforme Istex Accès Université d'Orléans Accès INSA CVL |
| Note: |
Actes d'un séminaire tenu à Trieste du.11 au 14 décembre 2000, d'après la préface Autre directeur de publication : N. Yamamoto Archives Springer e-books (Licence nationale) Archives Springer e-books (Licence nationale) |
| Autres localisations: | Voir dans le Sudoc |
| Edition sous un autre format: | • Nanoscale spectroscopy and its applications to semiconductor research, Y. Watanabe, ... [et al.], eds., Berlin, Springer, 2002, 1 volume (XV-306 p.), Lecture notes in physics, 3-540-43312-0 • Nanoscale Spectroscopy and Its Applications to Semiconductor Research, Texte imprimé, 9783662143711 • Nanoscale Spectroscopy and Its Applications to Semiconductor Research, Texte imprimé, 9783662143728 |
Table des matières:
- Spectro-microscopy by TEM-SEM
- Determination of Nanosize Particle Distribution by Low Frequency Raman Scattering: Comparison to Electron Microscopy
- Development of Cathodoluminescence (CL) for Semiconductor Research, Part I: TEM-CL Study of Microstructures and Defects in Semiconductor Epilayers
- Development of CL for Semiconductor Research, Part II: Cathodoluminescence Study of Semiconductor Nanoparticles and Nanostructures Using Low-Electron-Beam Energies
- Development of CL for Semiconductor Research, Part III: Study of Degradation Mechanisms in Compound Semiconductor-Based Devices by SEM-CL
- Microcharacterization of Conformal GaAs on Si Layers by Spatially Resolved Optical Techniques
- Strain Analysis in Submicron Electron Devices by Convergent Beam Electron Diffraction
- Synchrotron Radiation X-ray Microscopy Based on Zone Plate Optics
- Long-Term Oxidation Behaviour of Lead Sulfide Surfaces
- Cross-Sectional Photoemission Spectromicroscopy of Semiconductor Heterostructures
- Surface Imaging Using Electrons Excited by Metastable-Atom Impacts
- Application of Photoemission Electron Microscopy to Magnetic Domain Imaging
- Photoelectron Spectroscopy with a Photoemission Electron Microscope
- X-ray Photoemission and Low-Energy Electron Microscope
- Application of Imaging-Type Photoelectron Spectromicroscopy to Solid-State Physics
- Scanning Near-Field Optical Spectroscopy of Quantum-Confined Semiconductor Nanostructures
- Novel Tuning Fork Sensor for Low-Temperature Near-Field Spectroscopy
- Manipulating, Reacting, and Constructing Single Molecules with a Scanning Tunneling Microscope Tip
- Electron-Beam-Induced Decomposition of SiO2 Overlay on Si in STM Nanolithography
- Direct Imaging of InGaAs Quantum Dot States by Scanning Tunneling Spectroscopy
- Growth and Characterization of Ge Nanostructures on Si(111)
- Imaging of Zero-Dimensional States in Semiconductor Nanostructures Using Scanning Tunneling Microscopy
- Electronic-Excitation-Induced Enhancement in Metallicity on HOPG and Si Surfaces: In Situ STM/STS Studies
- Electronic Properties of Polycrystalline and Amorphous WO3 Investigated with Scanning Tunnelling Spectroscopy
- Probing of Electronic Transitions with Atomic-Scale Spatial Resolution in Semiconductor Quantum Well Structures
- Scanning Tunneling Microscope-Induced Light Emission from Nanoscale Structures.