Defect complexes in semiconductor structures : proceedings of the International school, held in Mátrafüred, Hungary September 13 17, 1982
Gespeichert in:
| Körperschaft: | |
|---|---|
| Weitere Verfasser: | , , |
| Format: | Livre numérique |
| Sprache: | Anglais |
| Veröffentlicht: |
Berlin [etc.] :
Springer
[20..].
Cham : Springer Nature |
| Schriftenreihe: | Lecture notes in physics
175 |
| Schlagworte: | |
| Online Zugang: | Accès sur la plateforme de l'éditeur Accès sur la plateforme Istex Accès Université d'Orléans Accès INSA CVL |
| Anmerkung: |
Archives Springer e-books (Licence nationale) Archives Springer e-books (Licence nationale) |
| Autres localisations: | Voir dans le Sudoc |
| Edition sous un autre format: | • Defect complexes in semiconductor structures, proceedings of the International school, held in Mátrafüred, Hungary, september 13-17, 1982, edited by J. Giber, F. Beleznay, I. C. Szép... [et al.], Berlin, Springer-Verlag, 1983, 1 vol. (VI-307 p.), Lecture notes in physics, 3-540-11986-8 • Defect Complexes in Semiconductor Structures, Texte imprimé, 9783662196342 |
Inhaltsangabe:
- A technologist's view on defects
- Characterization of impurities and defects by electron paramagnetic resonance and related techniques
- Review of the possibilities of electron microscopy in the identification of defect structures
- Electrical and optical measuring techniques for flaw states
- Theory of defect complexes
- Critical comparison of the theoretical models for anomalous large lattice relaxation in III V compounds
- Vacancy related structure defects in SiO2 Cyclic cluster calculations compared with experimental results
- A new model for the Si-A center
- Defect complexing in iron-doped silicon
- Photoluminescence of defect complexes in silicon
- Electron microscopical analysis of the stacking fault behaviour in inert-gas annealed Czochralski silicon
- Oxygen precipitation and the generation of secondary defects in oxygen-rich silicon
- Electrical and optical properties of oxygen-related donors in silicon formed at temperatures from 600 to 850 ů
- On the field dependence of capture and emission processes at deep centres
- Lattice matched heterolayers
- Compositional transition layers in heterostructure
- Defect complexes in III V compounds
- Low frequency current oscillations due to electron retrapping by the AsGa antisite defect in GaAs
- Main electron traps in gaas: Aggregates of antisite defects
- Defect reactions in gap caused by zinc diffusion
- Nonstatistical defect surroundings in mixed crystals the selfactivated luminescence centre in ZnSxSe1-x
- Structure and properties of the Si-SiO2 interregion
- Radiation defects of the semiconductor-insulator interface
- Analysis of Si/SiO2 interface defects by the method of term spectroscopy
- Theoretical aspects of laser annealing
- Radiation methods for creation of heterostructures on silicon.-Ion beam gettering in GaP
- Panel discussion
- Mechanical stress induced defect creation in GaP.