Defect complexes in semiconductor structures : proceedings of the International school, held in Mátrafüred, Hungary September 13 17, 1982

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Autor Corporativo: International school on defect complexes in semiconductor structures :1982
Otros Autores: Beleznay, Ferenc (Director de publicación), Szép, I. C. (Director de publicación), Giber, J. (Director de publicación)
Formato: Livre numérique
Lenguaje:Anglais
Publicado: Berlin [etc.] : Springer [20..].
Cham : Springer Nature
Colección:Lecture notes in physics 175
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Nota: Archives Springer e-books (Licence nationale)
Archives Springer e-books (Licence nationale)
Autres localisations: Voir dans le Sudoc
Edition sous un autre format:• Defect complexes in semiconductor structures, proceedings of the International school, held in Mátrafüred, Hungary, september 13-17, 1982, edited by J. Giber, F. Beleznay, I. C. Szép... [et al.], Berlin, Springer-Verlag, 1983, 1 vol. (VI-307 p.), Lecture notes in physics, 3-540-11986-8
• Defect Complexes in Semiconductor Structures, Texte imprimé, 9783662196342
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505 0 |a A technologist's view on defects -- Characterization of impurities and defects by electron paramagnetic resonance and related techniques -- Review of the possibilities of electron microscopy in the identification of defect structures -- Electrical and optical measuring techniques for flaw states -- Theory of defect complexes -- Critical comparison of the theoretical models for anomalous large lattice relaxation in III V compounds -- Vacancy related structure defects in SiO2 Cyclic cluster calculations compared with experimental results -- A new model for the Si-A center -- Defect complexing in iron-doped silicon -- Photoluminescence of defect complexes in silicon -- Electron microscopical analysis of the stacking fault behaviour in inert-gas annealed Czochralski silicon -- Oxygen precipitation and the generation of secondary defects in oxygen-rich silicon -- Electrical and optical properties of oxygen-related donors in silicon formed at temperatures from 600 to 850 ů -- On the field dependence of capture and emission processes at deep centres -- Lattice matched heterolayers -- Compositional transition layers in heterostructure -- Defect complexes in III V compounds -- Low frequency current oscillations due to electron retrapping by the AsGa antisite defect in GaAs -- Main electron traps in gaas: Aggregates of antisite defects -- Defect reactions in gap caused by zinc diffusion -- Nonstatistical defect surroundings in mixed crystals the selfactivated luminescence centre in ZnSxSe1-x -- Structure and properties of the Si-SiO2 interregion -- Radiation defects of the semiconductor-insulator interface -- Analysis of Si/SiO2 interface defects by the method of term spectroscopy -- Theoretical aspects of laser annealing -- Radiation methods for creation of heterostructures on silicon.-Ion beam gettering in GaP -- Panel discussion -- Mechanical stress induced defect creation in GaP. 
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