Defect complexes in semiconductor structures : proceedings of the International school, held in Mátrafüred, Hungary September 13 17, 1982
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| Autor Corporativo: | |
|---|---|
| Otros Autores: | , , |
| Formato: | Livre numérique |
| Lenguaje: | Anglais |
| Publicado: |
Berlin [etc.] :
Springer
[20..].
Cham : Springer Nature |
| Colección: | Lecture notes in physics
175 |
| Materias: | |
| Acceso en línea: | Accès sur la plateforme de l'éditeur Accès sur la plateforme Istex Accès Université d'Orléans Accès INSA CVL |
| Nota: |
Archives Springer e-books (Licence nationale) Archives Springer e-books (Licence nationale) |
| Autres localisations: | Voir dans le Sudoc |
| Edition sous un autre format: | • Defect complexes in semiconductor structures, proceedings of the International school, held in Mátrafüred, Hungary, september 13-17, 1982, edited by J. Giber, F. Beleznay, I. C. Szép... [et al.], Berlin, Springer-Verlag, 1983, 1 vol. (VI-307 p.), Lecture notes in physics, 3-540-11986-8 • Defect Complexes in Semiconductor Structures, Texte imprimé, 9783662196342 |
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| 111 | 2 | |a International school on defect complexes in semiconductor structures |d (Mátrafüred |c :1982). | |
| 245 | 1 | 0 | |a Defect complexes in semiconductor structures : |b proceedings of the International school, held in Mátrafüred, Hungary September 13 17, 1982 |c edited by J. Giber, F. Beleznay, I. C. Szép... [et al.]. |
| 260 | |a Berlin [etc.] : |b Springer. | ||
| 260 | |a Cham : |b Springer Nature, |c [20..]. | ||
| 490 | 0 | |a Lecture notes in physics |v 175 |x 1616-6361 | |
| 500 | |a Archives Springer e-books (Licence nationale) | ||
| 500 | |a Archives Springer e-books (Licence nationale) | ||
| 505 | 0 | |a A technologist's view on defects -- Characterization of impurities and defects by electron paramagnetic resonance and related techniques -- Review of the possibilities of electron microscopy in the identification of defect structures -- Electrical and optical measuring techniques for flaw states -- Theory of defect complexes -- Critical comparison of the theoretical models for anomalous large lattice relaxation in III V compounds -- Vacancy related structure defects in SiO2 Cyclic cluster calculations compared with experimental results -- A new model for the Si-A center -- Defect complexing in iron-doped silicon -- Photoluminescence of defect complexes in silicon -- Electron microscopical analysis of the stacking fault behaviour in inert-gas annealed Czochralski silicon -- Oxygen precipitation and the generation of secondary defects in oxygen-rich silicon -- Electrical and optical properties of oxygen-related donors in silicon formed at temperatures from 600 to 850 ů -- On the field dependence of capture and emission processes at deep centres -- Lattice matched heterolayers -- Compositional transition layers in heterostructure -- Defect complexes in III V compounds -- Low frequency current oscillations due to electron retrapping by the AsGa antisite defect in GaAs -- Main electron traps in gaas: Aggregates of antisite defects -- Defect reactions in gap caused by zinc diffusion -- Nonstatistical defect surroundings in mixed crystals the selfactivated luminescence centre in ZnSxSe1-x -- Structure and properties of the Si-SiO2 interregion -- Radiation defects of the semiconductor-insulator interface -- Analysis of Si/SiO2 interface defects by the method of term spectroscopy -- Theoretical aspects of laser annealing -- Radiation methods for creation of heterostructures on silicon.-Ion beam gettering in GaP -- Panel discussion -- Mechanical stress induced defect creation in GaP. | |
| 506 | |a Accès en ligne pour les établissements français bénéficiaires des licences nationales | ||
| 506 | |a Accès soumis à abonnement pour tout autre établissement | ||
| 506 | |a Conditions particulières de réutilisation pour les bénéficiaires des licences nationales. https://www.licencesnationales.fr/springer-nature-ebooks-contrat-licence-ln-2017 | ||
| 650 | |a Semiconducteurs | ||
| 650 | |a Matière condensée | ||
| 650 | |a Physique | ||
| 650 | |a Actes de congrès | ||
| 700 | 1 | |a Beleznay, Ferenc. |4 pbd | |
| 700 | 1 | |a Szép, I. C. |4 pbd | |
| 700 | 1 | |a Giber, J. |4 pbd | |
| 710 | 2 | |a Magyar Tudományos Akadémia. |b Műszaki Fizikai Kutató Intézete. |4 orm | |
| 776 | 0 | |0 160321131 |t Defect complexes in semiconductor structures |o proceedings of the International school, held in Mátrafüred, Hungary, september 13-17, 1982 |f edited by J. Giber, F. Beleznay, I. C. Szép... [et al.] |c Berlin |n Springer-Verlag |d 1983 |p 1 vol. (VI-307 p.) |s Lecture notes in physics |z 3-540-11986-8 | |
| 776 | 0 | |t Defect Complexes in Semiconductor Structures |b Texte imprimé |z 9783662196342 | |
| 856 | 4 | |q PDF |u https://doi.org/10.1007/3-540-11986-8 |z Accès sur la plateforme de l'éditeur | |
| 856 | 4 | |u https://revue-sommaire.istex.fr/ark:/67375/8Q1-G1W4PGHF-T |z Accès sur la plateforme Istex | |
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| 997 | |0 972146 |1 Livre numérique |a Ressource numérique |b INSA |b ENSA |c 0/Bibliothèque numérique/ |c 1/Bibliothèque numérique/Autre ressource numérique/ | ||

