Electronic transport in hydrogenated amorphous semiconductors

Currently this is the book providing a thorough introduction and a unified theoretical basis for the interpretation of equilibrium transport processes in amorphous hydrogenated tetrahydrally coordinated semiconductors - a topic of great interest to physicists and material scientists (first devices f...

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Autori principali: Overhof, Harald, 1942-, Thomas, Peter (Autore)
Natura: Livre numérique
Lingua:Anglais
Pubblicazione: Berlin [etc.] : Springer [20..].
Cham : Springer Nature
Serie:Springer tracts in modern physics 114
Soggetti:
Accesso online:Accès sur la plateforme de l'éditeur
Accès sur la plateforme Istex
Accès Université d'Orléans
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Nota: Archives Springer e-books (Licence nationale)
Archives Springer e-books (Licence nationale)
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Edition sous un autre format:• Electronic Transport in Hydrogenated Amorphous Semiconductors, Texte imprimé, 9783540501862
• Electronic Transport in Hydrogenated Amorphous Semiconductors, Texte imprimé, 9783662150849
• Electronic Transport in Hydrogenated Amorphous Semiconductors, Texte imprimé, 9783662150856
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245 1 0 |a Electronic transport in hydrogenated amorphous semiconductors   |c H. Overhof, P. Thomas. 
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505 0 |a Elementary treatment of transport in amorphous semiconductors -- Review of transport experiments -- A transport theory for a homogenous model -- Detailed presentation of the theory -- The long-ranged random potential -- Temperature dependent reference energies -- The transport properties of hydrogenated amorphous semiconductors -- Concluding remarks. 
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520 |a Currently this is the book providing a thorough introduction and a unified theoretical basis for the interpretation of equilibrium transport processes in amorphous hydrogenated tetrahydrally coordinated semiconductors - a topic of great interest to physicists and material scientists (first devices for practical applications are already being manufactured). Most of the relevant literature is reviewed with particular emphasis on the approach developed by the authors. It explains most of the experimental data and allows the extraction of information about microscopic transport processes and parameters from equilibrium transport data. This work treats electronic transport in the mentioned type of semiconductors and in particular in a-Si:H and a-Ge:H. From elementary concepts the theory is developed towards higher degrees of completeness and sophistication. Further refinements for coping with the complexity of real systems are given. The comparison of theory with experiment is an important part of the book. 
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