Atomic Scale Characterization and First-Principles Studies of Si N Interfaces
This thesis presents results from a combined atomic-resolution Z-contrast and annular bright-field imaging and electron energy loss spectroscopy in the Scanning Transmission Electron Microscopy, as well as first principles studies of the interfaces between crystalline b Si3N4 and amorphous (i) CeO2-...
Uloženo v:
| Hlavní autor: | |
|---|---|
| Médium: | Livre numérique |
| Jazyk: | Anglais |
| Vydáno: |
New York, NY :
Springer New York
[20..].
Cham : Springer Nature |
| Vydání: | 1st ed. 2011. |
| Edice: | Springer Theses, Recognizing Outstanding Ph.D. Research
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| On-line přístup: | Accès sur la plateforme de l'éditeur Accès sur la plateforme Istex Accès Université d'Orléans Accès INSA CVL |
| Poznámka: |
Archives Springer e-books (Licence nationale) Archives Springer e-books (Licence nationale) |
| Autres localisations: | Voir dans le Sudoc |
| Edition sous un autre format: | • Atomic Scale Characterization and First-Principles Studies of Si N Interfaces, Texte imprimé, 9781461428572 • Atomic Scale Characterization and First-Principles Studies of Si N Interfaces, Texte imprimé, 9781441978165 • Atomic Scale Characterization and First-Principles Studies of Si N Interfaces, Texte imprimé, 9781441978189 |
Obsah:
- Silicon Nitride Ceramics Theoretical Methods and Approximations Overview of Experimental Tools Structural Energetics of b Si3N4 (1010) Surfaces Atomic Resolution Study of the Interfacial Bonding at SI3N4/CEO2 Grain Boundaries Atomic Resolution Study of b Si3N4/ SIO2 Interfaces Imagine Bulk a -SI3N4 Conclusions and Future Work Appendices Cited Literature.